| 001080 (1997) |
| Synthesis of in-doped PbTe crystals |
| 000592 (2003) |
| Vapor growth of Pb1-xInxTe crystals |
| 000604 (2003) |
| Specific heat, magnetic susceptibility and resistivity of In-doped Sn0.8Pb0.2Te |
| 000629 (2003) |
| Multiphonon emission process on DX-like centers in indium doped Pb0.75Sn0.25Te |
| 000A15 (2001) |
| A new method for growing thin layers of solid solutions between IV-VI compounds |
| 000E00 (1999) |
| Effect of annealing on the real structure of doped PbTe crystals |
| 001119 (1997) |
| Far-infrared spectroscopy of localized states in indium doped PbTe and Pb1-xAxTe (Ax = Mn0.017; Sn0.18) alloys |
| 001167 (1996-08) |
| Characteristic features of the magnetoresistance of Pb1-xSnxTe(In) and Pb1-xMnxTe(In) alloys in ultrastrong magnetic fields |
| 001279 (1995-11) |
| Effect of addition of Ge on the distribution of components and the superconducting transition in Sn1-zPbzTe: In films |
| 001471 (1994) |
| Surface LTT - film structure with In doping |
| 001526 (1993) |
| Properties of epitaxial indium arsenide doped with rare-earth elements |
| 001537 (1993) |
| Photoelectric properties of Pb1-x-ySnxGeyTe : in epitaxial films |
| 001585 (1993) |
| Carrier transport and non-equilibrium phenomena in doped PbTe and related materials |
| 001725 (1991) |
| Transport phenomena in Bi2-xInxTe2.85Se0.15 solid solutions |
| 001826 (1991) |
| Electrical and photoelectric properties of InAsSbP solid solutions |
| 000138 (2009) |
| Spectroscopic and first-principles studies of boron-doped diamond: Raman polarizability and local vibrational bands |
| 000142 (2009) |
| Photoconductivity of oxidized nanostructured PbTe(In) films |
| 000231 (2007) |
| Raman spectroscopy of Pb0.75Sn0.25Te(In) single crystal |
| 000664 (2003) |
| Growth of in-doped PbTe films on Si substrates |
| 000687 (2003) |
| Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique |
| 000799 (2002) |
| Pb and In codeposition in the vacuum growth of PbTe(In) films on Si substrates |
| 000804 (2002) |
| On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities |
| 000A02 (2001) |
| Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers |
| 000B59 (2000) |
| Observation of superconducting and structural phase transitions in Sn1-zGezTe :In solid solutions |
| 000D66 (1999) |
| Phase composition and properties of zirconia films doped with oxides of trivalent elements |
| 000F12 (1998) |
| Vapor-liquid-solid growth of Pb1-xInxTe crystals |
| 001067 (1997) |
| Vibrational spectroscopy of indium-doped Pb0.9Mn0.1Te alloy |
| 001296 (1995-08-10) |
| Intracenter Coulomb correlations, charge states, and spectrum of group-III impurities in IV-VI narrow-gap semiconductors |
| 001298 (1995-08) |
| Hopping conduction via highly localized impurity states of indium in Pb0.78Sn0.22Te solid solutions |
| 001663 (1992) |
| Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy |
| 001801 (1991) |
| Influence of isovalent doping with indium on the properties of epitaxial gallium arsenide films grown from the vapor phase |
| 001825 (1991) |
| Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions |
| 001848 (1991) |
| Behavior of impurities of p-type GaInSbAs solid solutions |
| 001986 (1989) |
| |
| 001A33 (1989) |
| |
| 001B20 (1988) |
| |
| 001E97 (1984) |
| |
| 000029 (2012) |
| Synthesis and luminescence properties of lithium, zinc and scandium 1-(2-pyridyl)naphtholates |
| 000041 (2012) |
| Influence of Sn on the thermoelectric properties of (BixSb1-x)2Te3 single crystals |
| 000087 (2011) |
| Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices |
| 000134 (2009) |
| Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source |
| 000135 (2009) |
| Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ |
| 000139 (2009) |
| Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric |
| 000140 (2009) |
| Raman spectroscopy of Pb1-xSnxTe (In) single crystals |
| 000144 (2009) |
| Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications |
| 000155 (2009) |
| High-temperature transport and stability of SrFe1-xNbXO3-δ |
| 000159 (2009) |
| Giant Magnetoresistance in Narrow-Gap Ferroelectric-Semiconductor PbSnTe:In |
| 000165 (2009) |
| Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling |
| 000197 (2008) |
| Molecular Doping of Graphene |
| 000205 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000216 (2008) |
| Characterization of boron-doped diamonds using 11B high-resolution NMR at high magnetic fields |
| 000229 (2007) |
| Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites |
| 000249 (2007) |
| High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure |
| 000256 (2007) |
| Electron statistics and cluster formation in CdF2 semiconductors with DX-centers |
| 000278 (2006) |
| Tunable coherent infrared source from 5-16 μm based on difference-frequency mixing in an indium-doped GaSe crystal |
| 000308 (2006) |
| Modified GaSe crystal as a parametric frequency converter |
| 000381 (2005) |
| Effect of calcium impurity on spectral characteristics of NaCl-Ca,In crystals |
| 000457 (2004) |
| Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures |
| 000468 (2004) |
| Large single crystals of gallium selenide: growing, doping by In and characterization |
| 000594 (2003) |
| Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction |
| 000610 (2003) |
| Relation of the photorefraction and optical-damage resistance to the intrinsic defect structure in LiNbO3 crystals |
| 000671 (2003) |
| Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses |
| 000695 (2003) |
| An increase of photorefractive sensitivity in In:LiNbO3 crystal |
| 000796 (2002) |
| Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs |
| 000948 (2001) |
| Radiation effects on the electrical activation processes in InSb under influence of nuclear reactor neutrons |
| 000974 (2001) |
| Magnetoresistance and shubnikov-de Haas effect in magnetic ion-doped Bi2Se3 |
| 000A06 (2001) |
| DX center gratings in real-time holography |
| 000B54 (2000) |
| Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se |
| 000B97 (2000) |
| Dopant distribution in crystals of PbTe-based solid solutions |
| 000C00 (2000) |
| Conductive and transparent zinc oxide films |
| 000F44 (1998) |
| Influence of In doping on the refractive indices of lithium niobate |
| 001117 (1997) |
| Formation of n+-layers in undoped and indium-doped GaAs wafers by Si and Si+P ion implantation |
| 001173 (1996-07) |
| Influence of quasilocal states of In on defect formation in PbTe |
| 001207 (1996-02) |
| Polarization of the donor-acceptor photoluminescence of p-CdSiAs2 single crystals |
| 001208 (1996-02) |
| Effect of In additions on the electrical properties of Sn0.8Ge0.2Te thin films obtained by laser sputtering |
| 001227 (1996) |
| Spectroscopic study of KTiOAsO4 single crystals doped with In, Sc, Fe |
| 001233 (1996) |
| Redistribution coefficients of metal impurities in indium phosphide grown by synthesis-solute diffusion technique |
| 001274 (1995-12) |
| Infrared array photodetectors for the 8-20-μm range, based on superphotosensitive films of a solid solution |
| 001276 (1995-11) |
| Superconducting and electrophysical properties of thin-films of Sn1-zGezTe:In solid solutions |
| 001289 (1995-10) |
| Formation of impurity precipitates in indium-doped CdTe after annealing and ion and electron irradiation |
| 001366 (1995) |
| Nano-scale medium-range order in semiconducting glassy chalcogenides |
| 001372 (1995) |
| LiNbO3 with the damage-resistant impurity indium |
| 001574 (1993) |
| Electrophysical properties of indium-doped bismuth telluride |
| 001624 (1992) |
| Self-compensation of electrically active impurities by intrinsic defects in Pb0.8Sn0.2Te solid solutions |
| 001660 (1992) |
| Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy |
| 001666 (1992) |
| Investigation of structure defects in epitaxial indium arsenide films |
| 001697 (1992) |
| Distributions of the concentrations of shallow and deep charged centers in the indium phosphide layers doped by implantation of beryllium ions |
| 001712 (1992) |
| Antiferromagnetic interaction of conduction electrons with local magnetic moments in Pb1#7B========hstok;xMnxTe |
| 001728 (1991) |
| Thermal conductivity of PbTe doped simultaneously with In and I |
| 001748 (1991) |
| Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping |
| 001767 (1991) |
| Optical spectrum evidence for thermal instability in the PbTe:In:Ga system resulting from a local instability of the lead telluride lattice |
| 001802 (1991) |
| Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge |
| 001803 (1991) |
| Indium impurity states in Pb1-xSnxSe solid solutions |
| 001804 (1991) |
| In0.53Ga0.47As/In0.88Ga0.12As0.23P0.77 heterostructres with a two-dimensional electron gas |
| 001829 (1991) |
| Effect of doping on exciton states in InSe and GaSe lamellar semiconductors |
| 001838 (1991) |
| Cooling of electrons and noise in heating electric fields |
| 001841 (1991) |
| Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films |
| 001842 (1991) |
| Characteristics of compensation of the doping effect of donor impurities by vacancies in Pb0.93Sn0.07Se |
| 001844 (1991) |
| Changes in the defect structure of CdxHg1-x Te as a result of doping with indium |
| 001847 (1991) |
| Behavior of ytterbium in epitaxial p-type GalnSbAs films |
