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Serveur d'exploration sur l'Indium

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Le cluster P. Werner - N. D. Zakharov

Terms

32P. Werner
11N. D. Zakharov
14A. O. Kosogov
19I. P. Soshnikov
6U. Gösele
10D. Gerthsen
14W. V. Lundin
15A. S. Usikov

Associations

Freq.WeightAssociation
1010N. D. Zakharov - P. Werner
99A. O. Kosogov - P. Werner
77I. P. Soshnikov - P. Werner
66P. Werner - U. Gösele
66D. Gerthsen - I. P. Soshnikov
1010A. S. Usikov - W. V. Lundin
66A. S. Usikov - D. Gerthsen
Documents par ordre de pertinence
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
000129 (2010) Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000348 (2005) QD lasers : Physics and applications
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A74 (2000-06) Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix
000B48 (2000) Quantum dots formed by ultrathin insertions in wide-gap matrices
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001116 (1997) Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000979 (2001) Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
000988 (2001) Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
000996 (2001) Entropy-driven effects in self-organized formation of quantum dots
000A09 (2001) Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C61 (1999-08-30) Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
000C83 (1999-06-28) Surface-mode lasing from stacked InGaN insertions in a GaN matrix
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000E73 (1998-05-15) High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
001034 (1997-05-26) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
001051 (1997-02-24) Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
001085 (1997) Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
001115 (1997) High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots
001139 (1996-11-11) Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001314 (1995-05-15) Ultranarrow Luminescence Lines from Single Quantum Dots
001315 (1995-05-15) Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000074 (2011) MOVPE of device-oriented wide-band-gap III-N heterostructures
000209 (2008) Energy characteristics of excitons in InGaN/GaN heterostructures
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000505 (2003-11-03) Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000612 (2003) Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000636 (2003) MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000741 (2002-06) Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
000809 (2002) Mosaicity and electrical and optical properties of group III nitrides
000816 (2002) Long-wavelength quantum-dot lasers
000893 (2001-07) The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000947 (2001) Radiation-induced defects in n-type GaN and InN
000A45 (2000-09-20) Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000C12 (2000) 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000C65 (1999-08) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D55 (1999) Self-organized InAs quantum dots in a silicon matrix
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001158 (1996-09) Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001419 (1994-09) Development and study of the optical properties of InGaAs/GaAs quantum wires
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
Wicri

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