| 000A84 (2000-05) |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 (2000-05) |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000401 (2004-06) |
| High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates |
| 000501 (2003-12) |
| Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates |
| 000514 (2003-10) |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000636 (2003) |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000654 (2003) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000662 (2003) |
| High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells |
| 000B29 (2000-01) |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C12 (2000) |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C45 (1999-09-27) |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C66 (1999-08) |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000E07 (1999) |
| Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate |
| 000E15 (1999) |
| 3.9 W CW power from sub-monolayer quantum dot diode laser |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000406 (2004-05) |
| Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells |
| 000716 (2002-09) |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000824 (2002) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000D53 (1999) |
| Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser |
| 000348 (2005) |
| QD lasers : Physics and applications |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000374 (2005) |
| High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers |
| 000521 (2003-09) |
| Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates |
| 000551 (2003-05) |
| Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix |
| 000553 (2003-05) |
| Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates |
| 000884 (2001-09) |
| 1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots |
| 000894 (2001-07) |
| Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates |
| 000930 (2001) |
| Thermodynamic analysis of the MBE growth of GaInAsN |
| 000985 (2001) |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000991 (2001) |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000A16 (2001) |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A21 (2000-12-15) |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000B12 (2000-03) |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B80 (2000) |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000C65 (1999-08) |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000D25 (1999-02) |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000010 (2013) |
| The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers |
| 000219 (2008) |
| A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000387 (2005) |
| Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs |
| 000417 (2004-03) |
| Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy |
| 000611 (2003) |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000705 (2002-12) |
| Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures |
| 000708 (2002-11-11) |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000709 (2002-11) |
| Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates |
| 000759 (2002-03-25) |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000895 (2001-07) |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000914 (2001-03) |
| Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers |
| 000917 (2001-03) |
| InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As |
| 000962 (2001) |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000969 (2001) |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000979 (2001) |
| Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping |
| 000980 (2001) |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000988 (2001) |
| Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers |
| 000A17 (2001) |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A26 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000B10 (2000-03) |
| Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures |
| 000B17 (2000-02) |
| Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands |
| 000B81 (2000) |
| Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes |
| 000C09 (2000) |
| 8 W continuous wave operation of InGaAsN lasers at 1.3 μm |
| 000C10 (2000) |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C30 (1999-11) |
| X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots |
| 000C34 (1999-10-18) |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C58 (1999-09) |
| Gain characteristics of quantum-dot injection lasers |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000C74 (1999-07) |
| Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host |
| 000C92 (1999-05-10) |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 (1999-05) |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D42 (1999-01) |
| Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix |
| 000D50 (1999) |
| Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing |
| 000D73 (1999) |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000E06 (1999) |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E16 (1999) |
| 3.5W CW operation of quantum dot laser |
| 000E73 (1998-05-15) |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000E97 (1998-02-25) |
| Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots |
| 001032 (1997-06) |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 (1997-05-26) |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
