Le cluster K. D. Moiseev - M. P. Mikhailova
| 000C41 (1999-10) | InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency | |
| 000C51 (1999-09) | Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity | |
| 000C63 (1999-08) | Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions | |
| 000D17 (1999-03) | Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions | |
| 000D24 (1999-02) | Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 | |
| 000F54 (1998) | Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects | |
| 001033 (1997-06) | Influence of charge carriers on tuning in InAsSb lasers | |
| 000A43 (2000-09-20) | Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane | |
| 000E28 (1998-11) | Scanning electron microscopy of long-wavelength laser structures | |
| 000F00 (1998-02) | InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K) | |
| 000F88 (1997-11) | Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm | |
| 001012 (1997-08) | InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm | |
| 001159 (1996-08) | Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers | |
| 001292 (1995-09) | Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP | |
| 000711 (2002-11) | Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux | |
| 000862 (2001-12) | InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range | |
| 000892 (2001-07) | Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs | |
| 000918 (2001-03) | Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm | |
| 000A37 (2000-11) | InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I | |
| 000B18 (2000-02) | Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å | |
| 000C21 (1999-12) | Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm | |
| 000C81 (1999-07) | Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it | |
| 000D29 (1999-02) | High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range | |
| 000E92 (1998-03) | Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current | |
| 001171 (1996-07) | Maximum working temperature of InAsSb/InAsSbP diode lasers | |
| 000091 (2010) | Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction | |
| 000105 (2010) | Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells | |
| 000151 (2009) | InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix | |
| 000183 (2008) | Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution | |
| 000191 (2008) | Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range | |
| 000518 (2003-10) | Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface | |
| 000525 (2003-08) | Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction | |
| 000529 (2003-08) | Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures | |
| 000545 (2003-06) | Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy | |
| 000547 (2003-05-26) | A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy | |
| 000561 (2003-04) | Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range | |
| 000594 (2003) | Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction | |
| 000633 (2003) | Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity | |
| 000644 (2003) | Interface luminescence and lasing at a type II single broken-gap heterojunction | |
| 000745 (2002-05) | Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature | |
| 000793 (2002) | Raman scattering study of type II GaInAsSb/InAs heterostructures | |
| 000796 (2002) | Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs | |
| 000877 (2001-09-15) | Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs | |
| 000905 (2001-04) | The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1) | |
| 000908 (2001-04) | Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures | |
| 000910 (2001-03-19) | Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy | |
| 000913 (2001-03) | Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties | |
| 000949 (2001) | Quantum magnetotransport at a type II broken-gap single heterointerface | |
| 000A30 (2000-12) | Photoluminescence of Ga1 - xInxAsySb1 - y Solid Solutions Lattice-Matched to InAs | |
| 000A33 (2000-12) | Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers | |
| 000B21 (2000-02) | Magnetotransport in a Semimetal Channel in p-Ga1 - xInxAsySb1 - y / p-InAs Heterostructures with Various Compositions of the Solid Solution | |
| 000C20 (1999-12-01) | Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures | |
| 000D21 (1999-03) | Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure | |
| 000F01 (1998-02) | Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs | |
| 000F41 (1998) | Interface-induced phenomena in type II antimonide-arsenide heterostructures | |
| 000F59 (1998) | Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions | |
| 000F94 (1997-10) | Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures | |
| 001014 (1997-08) | Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution | |
| 001031 (1997-06) | Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation | |
| 001042 (1997-04) | Solid solution InxGa1-xAsySbzP1-y-z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy | |
| 001172 (1996-07) | Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region | |
| 001324 (1995-04) | Observation of an electroluminescence of confined carriers at single p-GaInAsSb/ p-InAs type-II broken-gap heterojunctions | |
| 001325 (1995-04) | GaInAsSb/InAs heterojunctions | |
| 001434 (1994-06) | Recombination near an N-n-GaSb/GaInAsSb heterojunction | |
| 001437 (1994-05-09) | 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers | |
| 001880 (1990) | Staggered-lineup heterojunctions in the system of GaSb-InAs | |
| 001896 (1990) | Original spontaneous electroluminescence generated in GaInAsSb heterojunction light-emitting diodes in the spectral range 1.8-2.4 μm | |
| 001B55 (1988) | ||
| 000137 (2009) | Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields | |
| 000150 (2009) | InSb quantum dots and quantum rings on InAs-rich surface | |
| 000530 (2003-08) | High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area | |
| 000652 (2003) | InAsSb/InAsSbP current-tunable laser with narrow spectral line width | |
| 000781 (2002) | Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature | |
| 000791 (2002) | Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm | |
| 000818 (2002) | Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction | |
| 000A28 (2000-12) | Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface | |
| 000D27 (1999-02) | Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary | |
| 000E40 (1998-09) | Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 μm | |
| 000E96 (1998-03) | Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence | |
| 001030 (1997-06) | Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures | |
| 001178 (1996-06) | High carrier mobility in p-type GaInAsSb/p-InAs heterostructures | |
| 001200 (1996-03) | Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction | |
| 001247 (1996) | Interface electroluminescence of confined carriers in type II broken-gap p-Ga-In-AsSb/p-InAs single heterojunction | |
| 001526 (1993) | Properties of epitaxial indium arsenide doped with rare-earth elements | |
| 001559 (1993) | Investigation of the structure of the conduction band of InAsSbP solid solutions | |
| 001647 (1992) | Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers | |
| 001792 (1991) | Interface luminescence due to above-barrier reflection in an isotypic p-InAs/P-InAsPSb heterostructure | |
| 001825 (1991) | Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions | |
| 001826 (1991) | Electrical and photoelectric properties of InAsSbP solid solutions | |
| 001A37 (1989) | ||
| 000011 (2013) | TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface | |
| 000023 (2013) | Electronic properties of a single heterojunction in InSb/InAs quantum dot system | |
| 000404 (2004-05) | MOCVD Growth and Mg-Doping of InAs Layers | |
| 000451 (2004) | Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs | |
| 000532 (2003-08) | Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy | |
| 000618 (2003) | Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE | |
| 000731 (2002-08) | Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions | |
| 000752 (2002-04-22) | Optical switching in midinfrared light-emitting diodes | |
| 000879 (2001-09) | InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy | |
| 000888 (2001-08) | The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy |
| This area was generated with Dilib version V0.5.77. |  |