| 000299 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000472 (2004) |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
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| Formation of InSb quantum dots in a GaSb matrix |
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| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
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| On the nature of defect states at interfaces of InAs/AlSb quantum wells |
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| Optical properties of InN with stoichoimetry violation and indium clustering |
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| Optical properties of InN related to surface plasmons |
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| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
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| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000492 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000545 (2003-06) |
| Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy |
| 000547 (2003-05-26) |
| A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy |
| 000637 (2003) |
| MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells |
| 000683 (2003) |
| Effect of spin-orbit interaction on cyclotron resonance in inas quantum wells |
| 000704 (2002-12) |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000810 (2002) |
| Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates |
| 000907 (2001-04) |
| Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
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| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
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| 3.9 W CW power from sub-monolayer quantum dot diode laser |
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| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000F31 (1998) |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 (1998) |
| Lateral association of vertically-coupled quantum dots |
| 000F52 (1998) |
| Formation of InAs quantum dots on a silicon (100) surface |
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| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
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| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
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| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
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| Identification of radiative recombination channels in quantum dot structures |
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| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth |
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| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
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| Optical emission range of structures with strained InAs quantum dots in GaAs |
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| Nature of optical transitions in self-organized InAs/GaAs quantum dots |
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| Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment |
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| Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots |
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| Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization) |
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| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
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| Recent developments in the III-nitride materials |
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| Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000345 (2005) |
| Resonant Raman spectroscopy on InN |
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| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
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| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000513 (2003-10-13) |
| Electrically tunable mid-infrared electroluminescence from graded cascade structures |
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| Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field |
| 000751 (2002-04-25) |
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| Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures |
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| Control by an electric field of electron-hole separation in type-II heterostructures |
| 000910 (2001-03-19) |
| Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy |
| 000963 (2001) |
| Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator |
| 000969 (2001) |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000978 (2001) |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000C10 (2000) |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C12 (2000) |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000D22 (1999-02-25) |
| Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells |
| 000D53 (1999) |
| Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser |
| 000D73 (1999) |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D80 (1999) |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E06 (1999) |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E07 (1999) |
| Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate |
| 000E16 (1999) |
| 3.5W CW operation of quantum dot laser |
| 000F30 (1998) |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F43 (1998) |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 000F96 (1997-10) |
| Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy |
| 001068 (1997) |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001115 (1997) |
| High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots |
| 001139 (1996-11-11) |
| Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing |
| 001147 (1996-10) |
| Photoluminescence of In0.53Ga0.47As/In0.52Al0.48As heterostructures with two-sided doping |
| 001210 (1996-02) |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 001211 (1996-02) |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds |
| 001258 (1996) |
| Cyclotron resonance in InAs quantum wells in tilted magnetic fields |
| 001301 (1995-07-03) |
| Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface |
| 001314 (1995-05-15) |
| Ultranarrow Luminescence Lines from Single Quantum Dots |
| 001315 (1995-05-15) |
| Structural characterization of (In,Ga)As quantum dots in a GaAs matrix |
| 001810 (1991) |
| Giant photocurrent in 2D structures in a magnetic field parallel to the 2D layer |
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| Drag photocurrent in a 2D electron gas near the cyclotron resonance and its first subharmonic |
| 000100 (2010) |
| Plasmonic effects and optical properties of InN composites with In nanoparticles |
| 000182 (2008) |
| Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes |
| 000209 (2008) |
| Energy characteristics of excitons in InGaN/GaN heterostructures |
| 000252 (2007) |
| From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN |
| 000485 (2004) |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
| 000593 (2003) |
| Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures |
| 000619 (2003) |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000668 (2003) |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000690 (2003) |
| Band gap of hexagonal InN and InGaN alloys |
| 000743 (2002-05-20) |
| Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics |
| 000816 (2002) |
| Long-wavelength quantum-dot lasers |
| 000823 (2002) |
| InN growth by plasma-assisted molecular beam epitaxy |
| 000824 (2002) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency |
| 000849 (2002) |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 (2002) |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000853 (2002) |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap |
| 000886 (2001-08-01) |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser |
| 000899 (2001-05) |
| X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses |
| 000926 (2001-01-15) |
| Excitonic contributions to the quantum-confined Pockels effect |
| 000946 (2001) |
| Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots |
| 000954 (2001) |
| Physical properties of InN with the band gap energy of 1.1 eV |
