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Serveur d'exploration sur l'Indium

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Le cluster V. N. Jmerik - J. Leymarie

Terms

11V. N. Jmerik
8J. Leymarie
8A. Vasson
12B. Monemar
5H. Amano

Associations

Freq.WeightAssociation
88A. Vasson - J. Leymarie
66J. Leymarie - V. N. Jmerik
66B. Monemar - V. N. Jmerik
66B. Monemar - J. Leymarie
66A. Vasson - V. N. Jmerik
66A. Vasson - B. Monemar
55H. Amano - V. N. Jmerik
55H. Amano - J. Leymarie
Documents par ordre de pertinence
000357 (2005) Optical properties of InN with stoichoimetry violation and indium clustering
000358 (2005) Optical properties of InN related to surface plasmons
000415 (2004-03-19) Mie Resonances, Infrared Emission, and the Band Gap of InN
000464 (2004) Mie resonances, infrared emission, and the band gap of InN
000492 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000280 (2006) Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
000299 (2006) Plasmonic effects in InN-based structures with nano-clusters of metallic indium
000345 (2005) Resonant Raman spectroscopy on InN
000454 (2004) Plasma-assisted MBE growth and characterization of InN on sapphire
000230 (2007) Recent developments in the III-nitride materials
000233 (2007) Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000512 (2003-10-15) Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
000679 (2003) Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
000707 (2002-11-15) Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
000823 (2002) InN growth by plasma-assisted molecular beam epitaxy
000963 (2001) Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator
000D39 (1999-01) Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions
000D63 (1999) Plasma-assisted MBE growth of GaN and InGaN on different substrates
Wicri

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