Le cluster A. A. Klochikhin - V. Yu. Davydov
| 000690 (2003) | Band gap of hexagonal InN and InGaN alloys | |
| 000849 (2002) | Band gap of hexagonal InN and InGaN alloys | |
| 000850 (2002) | Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) | |
| 000853 (2002) | Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap | |
| 000619 (2003) | Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys | |
| 000848 (2002) | Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply | |
| 000947 (2001) | Radiation-induced defects in n-type GaN and InN | |
| 000366 (2005) | Manifestation of the equilibrium hole distribution in photoluminescence of n-InN | |
| 000391 (2005) | Acceptor states in the photoluminescence spectra of n-InN | |
| 000393 (2005) | A gauge invariant approach to the raman scattering in heavily doped crystals | |
| 000675 (2003) | Energy gap and optical properties of InxGa1-xN | |
| 000984 (2001) | InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates | |
| 000C26 (1999-11-22) | Experimental and theoretical studies of phonons in hexagonal InN | |
| 000273 (2007) | Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation | |
| 000295 (2006) | Resonant Raman scattering in InGaN alloys | |
| 000307 (2006) | Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy | |
| 000492 (2004) | Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply | |
| 000496 (2003-12-29) | Photoluminescence, depth profile, and lattice instability of hexagonal InN films | |
| 000141 (2009) | Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation | |
| 000415 (2004-03-19) | Mie Resonances, Infrared Emission, and the Band Gap of InN | |
| 000454 (2004) | Plasma-assisted MBE growth and characterization of InN on sapphire | |
| 000464 (2004) | Mie resonances, infrared emission, and the band gap of InN | |
| 000491 (2004) | Correlations between electrical and optical properties for OMVPE InN | |
| 000612 (2003) | Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices | |
| 000899 (2001-05) | X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses | |
| 000954 (2001) | Physical properties of InN with the band gap energy of 1.1 eV | |
| 000963 (2001) | Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator | |
| 000B84 (2000) | Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties | |
| 000D65 (1999) | Phonon structure of InN grown by atomic layer epitaxy | |
| 001910 (1990) | Investigation of the influence of chemical treatment of InP on the surface recombination velocity by the Raman light scattering method |
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