| 001061 (1997-01) |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 000B12 (2000-03) |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000D25 (1999-02) |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000759 (2002-03-25) |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000C65 (1999-08) |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000C92 (1999-05-10) |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 001024 (1997-07) |
| Lateral association of vertically coupled quantum dots |
| 001034 (1997-05-26) |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001146 (1996-10) |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 000275 (2007) |
| Analysis of the local indium composition in ultrathin InGaN layers |
| 000713 (2002-10-15) |
| Quantum dot origin of luminescence in InGaN-GaN structures |
| 000778 (2002) |
| lime-resolved studies of InGaN/GaN quantum dots |
| 000A26 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A84 (2000-05) |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000B00 (2000-04) |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000C34 (1999-10-18) |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C66 (1999-08) |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C83 (1999-06-28) |
| Surface-mode lasing from stacked InGaN insertions in a GaN matrix |
| 000C97 (1999-05) |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 (1999-04) |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D28 (1999-02) |
| Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix |
| 000D34 (1999-01-11) |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D42 (1999-01) |
| Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix |
| 000F07 (1998-01) |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F97 (1997-10) |
| Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy |
| 001032 (1997-06) |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001062 (1997-01) |
| Modulation of a quantum well potential by a quantum-dot array |
| 001210 (1996-02) |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 000539 (2003-07) |
| Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode |
| 000895 (2001-07) |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000985 (2001) |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000A21 (2000-12-15) |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A36 (2000-11) |
| The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm |
| 000B29 (2000-01) |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C45 (1999-09-27) |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 (1999-09) |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 (1999-09) |
| Gain characteristics of quantum-dot injection lasers |
| 000C61 (1999-08-30) |
| Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
| 000D31 (1999-02) |
| Gain in injection lasers based on self-organized quantum dots |
| 000E35 (1998-10) |
| Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots |
| 000E57 (1998-07) |
| Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm |
| 000E73 (1998-05-15) |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F30 (1998) |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F37 (1998) |
| Lateral association of vertically-coupled quantum dots |
| 001037 (1997-05) |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001044 (1997-04) |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 (1997-01) |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001063 (1997-01) |
| Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates |
| 001211 (1996-02) |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds |
| 000061 (2011) |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000074 (2011) |
| MOVPE of device-oriented wide-band-gap III-N heterostructures |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000349 (2005) |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000401 (2004-06) |
| High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates |
| 000421 (2004-03) |
| Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate |
| 000551 (2003-05) |
| Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix |
| 000674 (2003) |
| Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots |
| 000716 (2002-09) |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000766 (2002-02-15) |
| Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots |
| 000884 (2001-09) |
| 1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots |
| 000955 (2001) |
| Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs |
| 000962 (2001) |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000979 (2001) |
| Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping |
| 000980 (2001) |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000988 (2001) |
| Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers |
| 000A09 (2001) |
| Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences |
| 000A16 (2001) |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 (2001) |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A89 (2000-05) |
| Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm |
| 000B48 (2000) |
| Quantum dots formed by ultrathin insertions in wide-gap matrices |
| 000B80 (2000) |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000C15 (1999-12-15) |
| Optical anisotropy in vertically coupled quantum dots |
| 000C62 (1999-08) |
| Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy |
| 000D68 (1999) |
| Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE |
| 000E06 (1999) |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E36 (1998-10) |
| Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy |
| 000E58 (1998-07) |
| Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C |
| 000E66 (1998-06) |
| Self-organizing nanoheterostructures in InGaAsP solid solutions |
| 000F03 (1998-01-19) |
| Effect of matrix on InAs self-organized quantum dots on InP substrate |
| 000F51 (1998) |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F52 (1998) |
| Formation of InAs quantum dots on a silicon (100) surface |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 001029 (1997-06-09) |
| Enhanced arsenic excess in low-temperature grown GaAs due to indium doping |
| 001102 (1997) |
| Negative characteristic temperature of InGaAs quantum dot injection laser |
| 001114 (1997) |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001116 (1997) |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001158 (1996-09) |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001690 (1992) |
| Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers |
| 000011 (2013) |
| TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface |
| 000091 (2010) |
| Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction |
| 000104 (2010) |
| On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface |
| 000151 (2009) |
| InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix |
| 000209 (2008) |
| Energy characteristics of excitons in InGaN/GaN heterostructures |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000295 (2006) |
| Resonant Raman scattering in InGaN alloys |
| 000312 (2006) |
| Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence |
| 000326 (2006) |
| Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots |
| 000348 (2005) |
| QD lasers : Physics and applications |
