Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster A. Y. Polyakov - N. B. Smirnov

Terms

18A. Y. Polyakov
14N. B. Smirnov
13A. V. Govorkov
9A. G. Milnes
5S. J. Pearton

Associations

Freq.WeightAssociation
1414A. Y. Polyakov - N. B. Smirnov
1212A. V. Govorkov - N. B. Smirnov
1212A. V. Govorkov - A. Y. Polyakov
99A. G. Milnes - N. B. Smirnov
99A. G. Milnes - A. Y. Polyakov
77A. G. Milnes - A. V. Govorkov
55N. B. Smirnov - S. J. Pearton
Documents par ordre de pertinence
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001400 (1994-12-01) Hydrogen passivation effects in InGaAlP and InGaP
000482 (2004) Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000756 (2002-04-15) Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
001221 (1996) The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
001260 (1996) Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
000787 (2002) Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
000800 (2002) Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
000819 (2002) Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
001548 (1993) Mechanism of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb
001157 (1996-09) Optical and luminescence properties of stressed layers with quantum wells in GaInAsP/InP heterostructures grown by MOS hydride epitaxy
001873 (1990) The effect of hydrogen on bulk and surface traps in indium antimonide
001952 (1989) The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001979 (1989) Charge state and hydrogen levels position in different III-V materials
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024