Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster B. N. Zvonkov - I. G. Malkina

Terms

56B. N. Zvonkov
16I. G. Malkina
14D. O. Filatov
20V. Ya. Aleshkin
12E. A. Uskova
17I. A. Karpovich
13N. V. Baidus

Associations

Freq.WeightAssociation
1616B. N. Zvonkov - I. G. Malkina
1212B. N. Zvonkov - D. O. Filatov
1111B. N. Zvonkov - V. Ya. Aleshkin
1111B. N. Zvonkov - E. A. Uskova
1010B. N. Zvonkov - I. A. Karpovich
99B. N. Zvonkov - N. V. Baidus
88I. A. Karpovich - N. V. Baidus
88D. O. Filatov - I. A. Karpovich
55I. G. Malkina - V. Ya. Aleshkin
Documents par ordre de pertinence
001006 (1997-09) Photoelectric properties of GaAs/InAs heterostructures with quantum dots
000410 (2004-04) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000927 (2001-01) Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
000970 (2001) Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy
000E31 (1998-10) Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
001894 (1990) Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures
000163 (2009) Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000495 (2004) 1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
000609 (2003) Resonant states of carbon acceptor in p-InGaAs/GaAs δ-doped quantum well heterostructure
000797 (2002) Photoelectric spectroscopy of InAs/GaAs quantum dot structures in a semiconductor/electrolyte system
000901 (2001-05) Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
001090 (1997) Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
001144 (1996-10-10) Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells
001199 (1996-03-25) Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
001295 (1995-08-25) Strong polarization of the photoluminescence of InxGa1-xP grown on (110) GaAs
001323 (1995-04) Superluminescence polarization and optical-loss anisotropy in an InGaP/GaAs/InGaP waveguide structure
001461 (1994-01) Use of quantum-well structures to study defect formation at semiconductor surfaces
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
000110 (2010) Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
000153 (2009) Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
000315 (2006) Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots
000359 (2005) Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers
000442 (2004) Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000544 (2003-06) Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000571 (2003-02) Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy
000597 (2003) The conductivity of disordered 2D systems: from weak to strong localization
000660 (2003) Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
000738 (2002-06-15) Quantum corrections to conductivity: From weak to strong localization
000750 (2002-05) Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
000863 (2001-11-15) Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures
000873 (2001-10) Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures
000C44 (1999-10) Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
000D18 (1999-03) Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
000D54 (1999) Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
000D67 (1999) Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots
000E46 (1998-09) Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
000F22 (1998) Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
000F35 (1998) Low temperature transport properties of InAs/GaAs structures with quantum dots
001036 (1997-05-05) Transport anisotropy in spontaneously ordered GaInP2 alloys
001152 (1996-10) Diagnostics of heterostructures with quantum wells by the method of capacitive photovoltage spectroscopy
001250 (1996) Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures
001273 (1995-12) Optical phonons in spontaneously ordered InGaP solid solutions
001532 (1993) Polarization dependence of the interband optical absorption by an InGaAs quantum well in GaAs
001564 (1993) InGaP/GaAs/InGaAs quantum well lasers prepared by atmospheric pressure metalorganic chemical vapour deposition
001586 (1993) Capacitance-voltage characteristics of superlattices
001667 (1992) Intersubband absorption of infrared radiation in stressed quantum-well InxGa1-xAs-GaAs structures
001672 (1992) Influence of sulfiding on the state of the surface and photoelectric properties of InP and GaAs
001689 (1992) Electronic state of the surface of InP modified by treatment in sulfur vapor
001691 (1992) Electron state of a surface of InP modified by treatment in sulfur vapor
000084 (2011) Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000096 (2010) Resonant enhancement of the transversal Kerr effect in the InMnAs layers
000149 (2009) Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000160 (2009) Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs
000172 (2009) Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000186 (2008) Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
000210 (2008) Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
000234 (2007) Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000371 (2005) Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000389 (2005) Antilocalization and spin-orbit coupling in the hole gas in strained GaAs/InxGa1-xAs/GaAs quantum well heterostructures
000426 (2004-02) Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
000438 (2004) Weak antilocalization in quantum wells in tilted magnetic fields
000548 (2003-05-15) Electron-electron interaction with decreasing conductance
000573 (2003-02) Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ-L Intervalley Transfer
000599 (2003) THz radiation from optically pumped n-type GaAs/InGaAs multi quantum well heterostructures
000640 (2003) Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
000874 (2001-10) Difference Mode Generation in Injection Lasers
000B27 (2000-01) The Use of a Scanning Tunneling Microscope (STM) for Investigation of Local Photoconductivity of Quantum-Dimensional Semiconductor Structures
000B91 (2000) Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure
000F09 (1998-01) Characterization of GaAs/ InxGa1-xAs quantum-dot heterostructures by electrical and optical methods
001535 (1993) Photoluminescence emitted by a quantum well with a hight photocarrier density
001578 (1993) Effect of recombination in the space charge region of the illuminance characteristics of the surface photo-emf of GaAs and InP
001C39 (1987)
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024