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Serveur d'exploration sur l'Indium

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Le cluster I. G. Savel Ev - S. V. Novikov

Terms

23I. G. Savel Ev
27S. V. Novikov
16A. M. Kreshchuk
14T. A. Polyanskaya
5G. Remenyi

Associations

Freq.WeightAssociation
1616I. G. Savel Ev - S. V. Novikov
1414A. M. Kreshchuk - I. G. Savel Ev
1313A. M. Kreshchuk - S. V. Novikov
1010S. V. Novikov - T. A. Polyanskaya
1010I. G. Savel Ev - T. A. Polyanskaya
99A. M. Kreshchuk - T. A. Polyanskaya
55G. Remenyi - I. G. Savel Ev
Documents par ordre de pertinence
000D83 (1999) Interaction of low-density 2DEG with acoustic phonons
000F20 (1998) Spin-orbit splitting and weak antilocalization in an asymmetric In0.53Ga0.47As/InP quantum well
001226 (1996) Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
001358 (1995) Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces
001462 (1994-01) Shubnikov-de Hass oscillations in a nonuniform 2D electron gas
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001B22 (1988)
000976 (2001) Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid
000E38 (1998-09) Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
001041 (1997-04) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
001186 (1996-05) Quenching of persistent photoconductivity by electrical pulses
001193 (1996-05) Effect of a strong electric field on the properties of a nonequilibrium, two-dimensional electron gas in nonideal heterostructures
001308 (1995-07) Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect
001453 (1994-02) Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures
001660 (1992) Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy
001986 (1989)
001E18 (1985)
000459 (2004) Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000702 (2002-12) Weak Antilocalization and Spin-Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
000814 (2002) Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP
001452 (1994-02) Relationship between growth conditions and heterojunction quality in InP/In1-xGaxAs selectively doped heterostructures grown by liquid-phase epitaxy
001474 (1994) Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures
001569 (1993) Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)
001B20 (1988)
001C36 (1987)
001E94 (1984)
000F46 (1998) Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
001165 (1996-08) Ellipsometric investigation of epitaxial layers of InGaAs and InAlAs solid solutions isoperiodic with InP
001187 (1996-05) Molecular beam epitaxy growth kinetics for group III nitrides
001309 (1995-07) Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
001748 (1991) Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping
001B64 (1988)
001E72 (1984)
Wicri

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