Le cluster B. R. Semyagin - V. V. Preobrazhenskii
| 000D68 (1999) | Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE | |
| 000E61 (1998-07) | Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures | |
| 000F06 (1998-01) | High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature | |
| 001029 (1997-06-09) | Enhanced arsenic excess in low-temperature grown GaAs due to indium doping | |
| 000C40 (1999-10) | Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures | |
| 000C62 (1999-08) | Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy | |
| 000E36 (1998-10) | Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy | |
| 001069 (1997) | Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature | |
| 000D12 (1999-03-15) | Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs | |
| 000E58 (1998-07) | Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C | |
| 001100 (1997) | Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films | |
| 001568 (1993) | Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity | |
| 001902 (1990) | Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method | |
| 000088 (2011) | 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber | |
| 000649 (2003) | InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth | |
| 000650 (2003) | InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source | |
| 001149 (1996-10) | Magnetic field-dependent microwave absorption due to superconducting In-Ga clusters in gallium arsenide grown by molecular-beam epitaxy | |
| 001272 (1995-12) | Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature | |
| 000095 (2010) | Semiconductor Nanostructures Modified by the UV Laser Radiation | |
| 000855 (2002) | A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths | |
| 000F79 (1997-12) | Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates | |
| 001117 (1997) | Formation of n+-layers in undoped and indium-doped GaAs wafers by Si and Si+P ion implantation | |
| 001340 (1995) | Vapour phase epitaxial growth GaAs film with a very low deep level concentration | |
| 001569 (1993) | Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C) | |
| 001801 (1991) | Influence of isovalent doping with indium on the properties of epitaxial gallium arsenide films grown from the vapor phase | |
| 001A38 (1989) | ||
| 001B64 (1988) | ||
| 001C68 (1987) | ||
| 001D70 (1986) | ||
| 001E19 (1985) | ||
| 000083 (2011) | Curvature-tuned InAs-based shells containing two-dimensional electron gas | |
| 000890 (2001-08) | Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy | |
| 000A28 (2000-12) | Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface | |
| 000C30 (1999-11) | X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots | |
| 000D30 (1999-02) | High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice | |
| 000D93 (1999) | Fourier analysis of X-ray rocking curves from superlattices | |
| 000E66 (1998-06) | Self-organizing nanoheterostructures in InGaAsP solid solutions | |
| 000F75 (1998) | AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions | |
| 001063 (1997-01) | Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates | |
| 001113 (1997) | InGaAsSb growth from Sb-rich solutions | |
| 001300 (1995-08) | Effect of growth temperature on the electron mobility in InAlAs/InGaAs transistor structures grown on InP substrates by molecular beam epitaxy | |
| 001316 (1995-05-15) | Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures | |
| 001366 (1995) | Nano-scale medium-range order in semiconducting glassy chalcogenides | |
| 001530 (1993) | Population inversion of spatial quantization levels in two-dimensional InAs/AlSb/GaSb systems | |
| 001663 (1992) | Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy | |
| 001748 (1991) | Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping | |
| 001B20 (1988) | ||
| 001D55 (1986) | ||
| 001D66 (1986) | ||
| 001E18 (1985) | ||
| 001E72 (1984) | ||
| 001E94 (1984) |
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