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Serveur d'exploration sur l'Indium

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Le cluster T. I. Voronina - T. S. Lagunova

Terms

23T. I. Voronina
23T. S. Lagunova
12M. A. Sipovskaya

Associations

Freq.WeightAssociation
2121T. I. Voronina - T. S. Lagunova
99M. A. Sipovskaya - T. S. Lagunova
88M. A. Sipovskaya - T. I. Voronina
Documents par ordre de pertinence
000731 (2002-08) Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000C81 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000E96 (1998-03) Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
001014 (1997-08) Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001559 (1993) Investigation of the structure of the conduction band of InAsSbP solid solutions
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001825 (1991) Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
000183 (2008) Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000529 (2003-08) Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000532 (2003-08) Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000888 (2001-08) The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy
000913 (2001-03) Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties
000B21 (2000-02) Magnetotransport in a Semimetal Channel in p-Ga1 - xInxAsySb1 - y / p-InAs Heterostructures with Various Compositions of the Solid Solution
000F01 (1998-02) Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
000F59 (1998) Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions
001178 (1996-06) High carrier mobility in p-type GaInAsSb/p-InAs heterostructures
001325 (1995-04) GaInAsSb/InAs heterojunctions
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001A81 (1988)
000C39 (1999-10) Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition
000D21 (1999-03) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
000D29 (1999-02) High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
001847 (1991) Behavior of ytterbium in epitaxial p-type GalnSbAs films
001C11 (1987)
001E43 (1984)
Wicri

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