Le cluster G. E. Cirlin - V. A. Egorov
| 000411 (2004-04) | The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System | |
| 000421 (2004-03) | Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate | |
| 000485 (2004) | Effect of growth kinetics on the structural and optical properties of quantum dot ensembles | |
| 000526 (2003-08) | Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100) | |
| 000399 (2004-06) | Spectroscopy of Exciton States of InAs Quantum Molecules | |
| 000499 (2003-12) | Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature | |
| 000536 (2003-07) | Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System | |
| 000551 (2003-05) | Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix | |
| 000955 (2001) | Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs | |
| 000A45 (2000-09-20) | Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface | |
| 000244 (2007) | Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells | |
| 000642 (2003) | Investigation of the formation of InAs QD's in a AlGaAs matrix | |
| 000747 (2002-05) | Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells | |
| 000763 (2002-03) | Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures | |
| 000983 (2001) | Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties | |
| 000A36 (2000-11) | The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm | |
| 000A59 (2000-07) | Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix | |
| 000A62 (2000-07) | Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range | |
| 000A82 (2000-05-08) | Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate | |
| 000A89 (2000-05) | Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm | |
| 000C56 (1999-09) | Heteroepitaxial growth of InAs on Si: a new type of quantum dot | |
| 000F52 (1998) | Formation of InAs quantum dots on a silicon (100) surface | |
| 001013 (1997-08) | Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams | |
| 001232 (1996) | STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques | |
| 001379 (1995) | Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy | |
| 000314 (2006) | Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells | |
| 000789 (2002) | Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si | |
| 000A91 (2000-05) | A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns | |
| 000F98 (1997-10) | A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system | |
| 001126 (1997) | Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces | |
| 000595 (2003) | The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaAs quantum dots | |
| 000640 (2003) | Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells | |
| 000795 (2002) | Photoluminescence of isolated quantum dots in metastable InAs arrays | |
| 000A96 (2000-04) | Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces | |
| 000C85 (1999-06) | Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy | |
| 001011 (1997-08) | Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy | |
| 000075 (2011) | Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents | |
| 000129 (2010) | Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing | |
| 000349 (2005) | Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm | |
| 000509 (2003-11) | Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix | |
| 000539 (2003-07) | Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode | |
| 000603 (2003) | Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots | |
| 000625 (2003) | Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging | |
| 000945 (2001) | Reversibility of the island shape, volume and density in Stranski-Krastanow growth | |
| 000D11 (1999-03-22) | Optical properties of InAs quantum dots in a Si matrix | |
| 000D55 (1999) | Self-organized InAs quantum dots in a silicon matrix | |
| 000F07 (1998-01) | Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates | |
| 001267 (1996) | An intemediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy | |
| 001301 (1995-07-03) | Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface | |
| 001305 (1995-07) | Luminescence properties of InAs quantum dots on vicinal GaAs(100) surface |
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