| 000C34 (1999-10-18) |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C56 (1999-09) |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000D34 (1999-01-11) |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D73 (1999) |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000E06 (1999) |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E73 (1998-05-15) |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F31 (1998) |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 (1998) |
| Lateral association of vertically-coupled quantum dots |
| 000F43 (1998) |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000501 (2003-12) |
| Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates |
| 000636 (2003) |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000654 (2003) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000816 (2002) |
| Long-wavelength quantum-dot lasers |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 (2000-12-15) |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000C45 (1999-09-27) |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C58 (1999-09) |
| Gain characteristics of quantum-dot injection lasers |
| 000C65 (1999-08) |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C92 (1999-05-10) |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 (1999-05) |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 (1999-04) |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D11 (1999-03-22) |
| Optical properties of InAs quantum dots in a Si matrix |
| 000D50 (1999) |
| Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing |
| 000D55 (1999) |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D80 (1999) |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E18 (1999) |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000F07 (1998-01) |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F52 (1998) |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001005 (1997-09) |
| Quantum-dot lasers: Principal components of the threshold current density |
| 001034 (1997-05-26) |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001044 (1997-04) |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 (1997-01) |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001062 (1997-01) |
| Modulation of a quantum well potential by a quantum-dot array |
| 001095 (1997) |
| Radiation characteristics of injection lasers based on vertically coupled quantum dots |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000348 (2005) |
| QD lasers : Physics and applications |
| 000514 (2003-10) |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000570 (2003-02-10) |
| Complete suppression of filamentation and superior beam quality in quantum-dot lasers |
| 000611 (2003) |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000824 (2002) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency |
| 000894 (2001-07) |
| Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates |
| 000895 (2001-07) |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000980 (2001) |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000985 (2001) |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000991 (2001) |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000A16 (2001) |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A26 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A84 (2000-05) |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 (2000-05) |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000B12 (2000-03) |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 (2000-01) |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000B80 (2000) |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000C12 (2000) |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C66 (1999-08) |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000D25 (1999-02) |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000D28 (1999-02) |
| Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix |
| 000E07 (1999) |
| Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate |
| 000E15 (1999) |
| 3.9 W CW power from sub-monolayer quantum dot diode laser |
| 000E16 (1999) |
| 3.5W CW operation of quantum dot laser |
| 001032 (1997-06) |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001037 (1997-05) |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001314 (1995-05-15) |
| Ultranarrow Luminescence Lines from Single Quantum Dots |
| 000334 (2005) |
| Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates |
| 000349 (2005) |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000367 (2005) |
| Long-wavelength lasers based on metamorphic quantum dots |
| 000401 (2004-06) |
| High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates |
| 000662 (2003) |
| High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells |
| 000708 (2002-11-11) |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000867 (2001-10-15) |
| Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature |
| 000946 (2001) |
| Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots |
| 000987 (2001) |
| Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots |
| 000A17 (2001) |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000C10 (2000) |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C15 (1999-12-15) |
| Optical anisotropy in vertically coupled quantum dots |
| 000D31 (1999-02) |
| Gain in injection lasers based on self-organized quantum dots |
| 000D42 (1999-01) |
| Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix |
| 000D53 (1999) |
| Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser |
| 000D82 (1999) |
| Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser |
| 000E35 (1998-10) |
| Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots |
| 000E57 (1998-07) |
| Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm |
| 000F95 (1997-10) |
| Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots |
| 001024 (1997-07) |
| Lateral association of vertically coupled quantum dots |
| 001068 (1997) |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001102 (1997) |
| Negative characteristic temperature of InGaAs quantum dot injection laser |
| 001146 (1996-10) |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001315 (1995-05-15) |
| Structural characterization of (In,Ga)As quantum dots in a GaAs matrix |
| 001410 (1994-10-15) |
| Optical spectroscopic studies of InAs layer transformation on GaAs surfaces |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000326 (2006) |
| Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000374 (2005) |
| High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers |
| 000403 (2004-06) |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 000417 (2004-03) |
| Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy |
| 000521 (2003-09) |
| Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates |
| 000539 (2003-07) |
| Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode |
| 000668 (2003) |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000716 (2002-09) |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000838 (2002) |
| Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors |
| 000885 (2001-08-15) |
| Strain engineering of self-organized InAs quantum dots |
