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Serveur d'exploration sur l'Indium

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Le cluster N. A. Bert - Yu. G. Musikhin

Terms

38N. A. Bert
43Yu. G. Musikhin
13A. A. Suvorova
17N. V. Kryzhanovskaya

Associations

Freq.WeightAssociation
160.396N. A. Bert - Yu. G. Musikhin
60.270A. A. Suvorova - N. A. Bert
50.185N. V. Kryzhanovskaya - Yu. G. Musikhin
Documents par ordre de pertinence
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000E58 (1998-07) Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000275 (2007) Analysis of the local indium composition in ultrathin InGaN layers
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000326 (2006) Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000349 (2005) Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000401 (2004-06) High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000539 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000890 (2001-08) Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000A26 (2000-12-01) Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
000B12 (2000-03) Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
000C62 (1999-08) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000C65 (1999-08) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000C92 (1999-05-10) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D25 (1999-02) Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E06 (1999) Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status
000E35 (1998-10) Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000E66 (1998-06) Self-organizing nanoheterostructures in InGaAsP solid solutions
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F97 (1997-10) Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
001024 (1997-07) Lateral association of vertically coupled quantum dots
001029 (1997-06-09) Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
000011 (2013) TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000091 (2010) Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000104 (2010) On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000411 (2004-04) The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000521 (2003-09) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000526 (2003-08) Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000536 (2003-07) Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000593 (2003) Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000642 (2003) Investigation of the formation of InAs QD's in a AlGaAs matrix
000662 (2003) High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000674 (2003) Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000716 (2002-09) The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000719 (2002-09) Stark Effect in Vertically Coupled Quantum Dots in InAs-GaAs Heterostructures
000747 (2002-05) Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000766 (2002-02-15) Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000816 (2002) Long-wavelength quantum-dot lasers
000955 (2001) Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000A18 (2001) 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A21 (2000-12-15) Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A36 (2000-11) The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
000B17 (2000-02) Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C15 (1999-12-15) Optical anisotropy in vertically coupled quantum dots
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C50 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
000C69 (1999-08) Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
000C83 (1999-06-28) Surface-mode lasing from stacked InGaN insertions in a GaN matrix
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
000D33 (1999-02) Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
000E48 (1998-08-24) Electronic structure of self-assembled InAs quantum dots in GaAs matrix
000F31 (1998) Optical properties of InAlAs quantum dots in an AlGaAs matrix
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
001061 (1997-01) Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
001062 (1997-01) Modulation of a quantum well potential by a quantum-dot array
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001100 (1997) Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films
001139 (1996-11-11) Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
001146 (1996-10) Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix
001158 (1996-09) Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001272 (1995-12) Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
001419 (1994-09) Development and study of the optical properties of InGaAs/GaAs quantum wires
Wicri

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