Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster J. Aderhold - J. Graul

Terms

7J. Aderhold
7J. Graul
13A. A. Klochikhin
12V. V. Emtsev
21V. Yu. Davydov
7F. Bechstedt
6J. Furthm Ller
5H. Harima

Associations

Freq.WeightAssociation
71.000J. Aderhold - J. Graul
50.546J. Graul - V. V. Emtsev
100.801A. A. Klochikhin - V. V. Emtsev
130.787A. A. Klochikhin - V. Yu. Davydov
110.693V. V. Emtsev - V. Yu. Davydov
50.546J. Aderhold - V. V. Emtsev
60.926F. Bechstedt - J. Furthm Ller
50.546F. Bechstedt - V. V. Emtsev
60.495J. Graul - V. Yu. Davydov
60.495J. Aderhold - V. Yu. Davydov
60.495F. Bechstedt - V. Yu. Davydov
50.488H. Harima - V. Yu. Davydov
50.445J. Furthm Ller - V. Yu. Davydov
Documents par ordre de pertinence
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000850 (2002) Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1)
000853 (2002) Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000848 (2002) Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
000366 (2005) Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000393 (2005) A gauge invariant approach to the raman scattering in heavily doped crystals
000675 (2003) Energy gap and optical properties of InxGa1-xN
000947 (2001) Radiation-induced defects in n-type GaN and InN
000984 (2001) InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
000273 (2007) Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation
000295 (2006) Resonant Raman scattering in InGaN alloys
000307 (2006) Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000492 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000496 (2003-12-29) Photoluminescence, depth profile, and lattice instability of hexagonal InN films
000612 (2003) Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000C26 (1999-11-22) Experimental and theoretical studies of phonons in hexagonal InN
000141 (2009) Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
000491 (2004) Correlations between electrical and optical properties for OMVPE InN
000963 (2001) Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator
000D65 (1999) Phonon structure of InN grown by atomic layer epitaxy
001910 (1990) Investigation of the influence of chemical treatment of InP on the surface recombination velocity by the Raman light scattering method
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024