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Serveur d'exploration sur l'Indium

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Le cluster N. D. Zakharov - P. Werner

Terms

11N. D. Zakharov
32P. Werner
6U. Gösele
14A. O. Kosogov
22M. Grundmann

Associations

Freq.WeightAssociation
100.533N. D. Zakharov - P. Werner
60.433P. Werner - U. Gösele
90.425A. O. Kosogov - P. Werner
70.264M. Grundmann - P. Werner
Documents par ordre de pertinence
000129 (2010) Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
001051 (1997-02-24) Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
001085 (1997) Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001115 (1997) High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots
001116 (1997) Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001314 (1995-05-15) Ultranarrow Luminescence Lines from Single Quantum Dots
001315 (1995-05-15) Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000816 (2002) Long-wavelength quantum-dot lasers
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000E73 (1998-05-15) High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
001034 (1997-05-26) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
001139 (1996-11-11) Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000886 (2001-08-01) Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
000946 (2001) Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000962 (2001) Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000969 (2001) Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C65 (1999-08) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D55 (1999) Self-organized InAs quantum dots in a silicon matrix
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000F31 (1998) Optical properties of InAlAs quantum dots in an AlGaAs matrix
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F52 (1998) Formation of InAs quantum dots on a silicon (100) surface
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001158 (1996-09) Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
001195 (1996-04-15) Nature of optical transitions in self-organized InAs/GaAs quantum dots
001205 (1996-02-12) Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001212 (1996-01-15) Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots
001232 (1996) STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
001267 (1996) An intemediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
001301 (1995-07-03) Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
Wicri

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