| 001146 (1996-10) |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001150 (1996-10) |
| Identification of radiative recombination channels in quantum dot structures |
| 001158 (1996-09) |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001161 (1996-08) |
| Optical emission range of structures with strained InAs quantum dots in GaAs |
| 000B12 (2000-03) |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000C65 (1999-08) |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 (1999-08) |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000D09 (1999-04) |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D25 (1999-02) |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000D28 (1999-02) |
| Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix |
| 000D42 (1999-01) |
| Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix |
| 000E18 (1999) |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000F07 (1998-01) |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F52 (1998) |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001024 (1997-07) |
| Lateral association of vertically coupled quantum dots |
| 001061 (1997-01) |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001116 (1997) |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001147 (1996-10) |
| Photoluminescence of In0.53Ga0.47As/In0.52Al0.48As heterostructures with two-sided doping |
| 001210 (1996-02) |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 000A84 (2000-05) |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000B29 (2000-01) |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C12 (2000) |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C34 (1999-10-18) |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 (1999-09-27) |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 (1999-09) |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 (1999-09) |
| Gain characteristics of quantum-dot injection lasers |
| 000D31 (1999-02) |
| Gain in injection lasers based on self-organized quantum dots |
| 000D34 (1999-01-11) |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D53 (1999) |
| Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser |
| 000D80 (1999) |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E07 (1999) |
| Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate |
| 000E15 (1999) |
| 3.9 W CW power from sub-monolayer quantum dot diode laser |
| 000E16 (1999) |
| 3.5W CW operation of quantum dot laser |
| 000E57 (1998-07) |
| Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm |
| 000F30 (1998) |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F31 (1998) |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 (1998) |
| Lateral association of vertically-coupled quantum dots |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 (1998) |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F97 (1997-10) |
| Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy |
| 001032 (1997-06) |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 (1997-05-26) |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001037 (1997-05) |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001044 (1997-04) |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 (1997-01) |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001062 (1997-01) |
| Modulation of a quantum well potential by a quantum-dot array |
| 001063 (1997-01) |
| Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates |
| 001102 (1997) |
| Negative characteristic temperature of InGaAs quantum dot injection laser |
| 001114 (1997) |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001139 (1996-11-11) |
| Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing |
| 001153 (1996-09-15) |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth |
| 001194 (1996-05) |
| Capacitance spectroscopy of electron energy levels in InAs quantum dots in a GaAs matrix |
| 001211 (1996-02) |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds |
| 001212 (1996-01-15) |
| Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots |
| 000668 (2003) |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000716 (2002-09) |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000884 (2001-09) |
| 1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots |
| 000962 (2001) |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000969 (2001) |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 (2000-12-15) |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A36 (2000-11) |
| The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm |
| 000A89 (2000-05) |
| Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm |
| 000C10 (2000) |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C92 (1999-05-10) |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 (1999-05) |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D73 (1999) |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D89 (1999) |
| High power CW operation of InGaAsN lasers at 1.3 μm |
| 000E06 (1999) |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E35 (1998-10) |
| Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots |
| 000E73 (1998-05-15) |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F03 (1998-01-19) |
| Effect of matrix on InAs self-organized quantum dots on InP substrate |
| 000F43 (1998) |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 001068 (1997) |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001195 (1996-04-15) |
| Nature of optical transitions in self-organized InAs/GaAs quantum dots |
| 001205 (1996-02-12) |
| Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment |
| 001422 (1994-08) |
| Optical properties of heterostructures with InGaAs-GaAs quantum clusters |
| 001425 (1994-08) |
| Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix |
| 001444 (1994-04) |
| Growth of (In,Ga)As/GaAs quantum-well heterostructures through the deposition of ''submonolayer'' strained InAs layers |
| 000061 (2011) |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000074 (2011) |
| MOVPE of device-oriented wide-band-gap III-N heterostructures |
| 000143 (2009) |
| On the nature of defect states at interfaces of InAs/AlSb quantum wells |
| 000170 (2009) |
| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
| 000209 (2008) |
| Energy characteristics of excitons in InGaN/GaN heterostructures |
| 000275 (2007) |
| Analysis of the local indium composition in ultrathin InGaN layers |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000299 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000349 (2005) |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000357 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000397 (2004-06-07) |
| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
| 000401 (2004-06) |
| High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates |
| 000415 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000472 (2004) |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
| 000485 (2004) |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
