Documents par ordre de pertinence

001E77 (1984)
001E93 (1984)
001C52 (1987)
001C63 (1987)
001D66 (1986)
001E26 (1985)
001A26 (1989)
001B32 (1988)
001D68 (1986)
001E95 (1984)
001457 (1994-02)		Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm
001525 (1993)		Protein A used in DELFIA for the determination of specific antibodies
001566 (1993)		High-power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
001676 (1992)		High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
001690 (1992)		Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
001805 (1991)		Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW
001807 (1991)		High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
001816 (1991)		Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001971 (1989)		High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers
001B31 (1988)
001C51 (1987)

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