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Serveur d'exploration sur l'Indium

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Le cluster I. V. Kudryashov - V. E. Tokranov

Terms

7I. V. Kudryashov
9V. E. Tokranov
20V. P. Evtikhiev
15A. N. Titkov
7E. Yu. Kotelnikov

Associations

Freq.WeightAssociation
50.630I. V. Kudryashov - V. E. Tokranov
80.596V. E. Tokranov - V. P. Evtikhiev
70.592I. V. Kudryashov - V. P. Evtikhiev
90.520A. N. Titkov - V. P. Evtikhiev
60.516A. N. Titkov - V. E. Tokranov
60.507E. Yu. Kotelnikov - V. P. Evtikhiev
Documents par ordre de pertinence
000E23 (1998-12) Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
000846 (2002) Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
000E01 (1999) Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
000587 (2003-01-01) Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000771 (2002-02) Atomic Force Microscopy of InAs Quantum Dots on the Vicinal Surface of a GaAs Crystal
000A35 (2000-11) The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes
000C52 (1999-09) Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
000E09 (1999) Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction
000E60 (1998-07) Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
000E80 (1998-05) Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system
000628 (2003) Non-linear power-current characteristics of quantum well lasers at high injection
000700 (2002-12-15) Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs
000805 (2002) Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy
000956 (2001) Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
000431 (2004-01-05) Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000712 (2002-11) Correlation spectroscopy of excitons and biexcitons on a single quantum dot
000774 (2002-01) Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots
000920 (2001-03) An Active Lasing Region with a Quantum Well and a Quantum Dot Array
000939 (2001) Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
001467 (1994) Type II heterojunctions in the GaInAsSb/GaSb system
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001880 (1990) Staggered-lineup heterojunctions in the system of GaSb-InAs
001B56 (1988)
001E77 (1984)
001E93 (1984)
Wicri

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