| 000545 (2003-06) |
| Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy |
| 000907 (2001-04) |
| Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy |
| 000397 (2004-06-07) |
| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
| 000547 (2003-05-26) |
| A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy |
| 000704 (2002-12) |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000910 (2001-03-19) |
| Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000472 (2004) |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
| 000513 (2003-10-13) |
| Electrically tunable mid-infrared electroluminescence from graded cascade structures |
| 000751 (2002-04-25) |
| Far Infrared Electroluminescence in Cascade Type-II Heterostructures |
| 000810 (2002) |
| Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates |
| 000170 (2009) |
| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000637 (2003) |
| MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells |
| 000978 (2001) |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000B60 (2000) |
| Novel approach to the calculation of instability regions in GaInAsSb alloys |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000143 (2009) |
| On the nature of defect states at interfaces of InAs/AlSb quantum wells |
| 000299 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000358 (2005) |
| Optical properties of InN related to surface plasmons |
| 000683 (2003) |
| Effect of spin-orbit interaction on cyclotron resonance in inas quantum wells |
| 000724 (2002-08-25) |
| Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field |
| 000743 (2002-05-20) |
| Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics |
| 000847 (2002) |
| Control by an electric field of electron-hole separation in type-II heterostructures |
| 000A30 (2000-12) |
| Photoluminescence of Ga1 - xInxAsySb1 - y Solid Solutions Lattice-Matched to InAs |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
| 000D22 (1999-02-25) |
| Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells |
| 000D63 (1999) |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
| 000E24 (1998-11-25) |
| Electron spin resonance in GaSb-InAs-GaSb semimetal quantum wells |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 000F96 (1997-10) |
| Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy |
| 001258 (1996) |
| Cyclotron resonance in InAs quantum wells in tilted magnetic fields |
| 001367 (1995) |
| Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization) |
| 000182 (2008) |
| Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes |
| 000230 (2007) |
| Recent developments in the III-nitride materials |
| 000233 (2007) |
| Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates |
| 000345 (2005) |
| Resonant Raman spectroscopy on InN |
| 000357 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000415 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000492 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000619 (2003) |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000690 (2003) |
| Band gap of hexagonal InN and InGaN alloys |
| 000823 (2002) |
| InN growth by plasma-assisted molecular beam epitaxy |
| 000832 (2002) |
| Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures |
| 000849 (2002) |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 (2002) |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000853 (2002) |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap |
| 000899 (2001-05) |
| X-ray Diffractometric Study of the Influence of a Buffer Layer on the Microstructure of Molecular-Beam Epitaxial InN Layers of Different Thicknesses |
| 000926 (2001-01-15) |
| Excitonic contributions to the quantum-confined Pockels effect |
| 000954 (2001) |
| Physical properties of InN with the band gap energy of 1.1 eV |
| 000963 (2001) |
| Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator |
| 000A13 (2001) |
| Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001) |
| 000C26 (1999-11-22) |
| Experimental and theoretical studies of phonons in hexagonal InN |
| 000E28 (1998-11) |
| Scanning electron microscopy of long-wavelength laser structures |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 (1998) |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 001061 (1997-01) |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001281 (1995-10-25) |
| Quasithreshold character of the far-infrared absorption in GaSb/InAs/GaSb quantum wells |
| 001312 (1995-06) |
| Measurement of the energy of interface donor centers in a GaSb/InAs/GaSb quantum well |
| 001810 (1991) |
| Giant photocurrent in 2D structures in a magnetic field parallel to the 2D layer |
| 001831 (1991) |
| Drag photocurrent in a 2D electron gas near the cyclotron resonance and its first subharmonic |
