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Serveur d'exploration sur l'Indium

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Le cluster N. Yu. Gordeev - S. V. Zaitsev

Terms

23N. Yu. Gordeev
25S. V. Zaitsev
8V. I. Kopchatov
17I. I. Novikov
9L. Ya. Karachinsky
17V. A. Shchukin

Associations

Freq.WeightAssociation
160.667N. Yu. Gordeev - S. V. Zaitsev
80.590N. Yu. Gordeev - V. I. Kopchatov
80.566S. V. Zaitsev - V. I. Kopchatov
80.647I. I. Novikov - L. Ya. Karachinsky
100.506I. I. Novikov - N. Yu. Gordeev
60.417L. Ya. Karachinsky - N. Yu. Gordeev
50.294I. I. Novikov - V. A. Shchukin
Documents par ordre de pertinence
000590 (2003-01) Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
000C22 (1999-12) Superradiance in semiconductors
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000B07 (2000-03) Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model
000C82 (1999-07) Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000E57 (1998-07) Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm
000F43 (1998) Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
001005 (1997-09) Quantum-dot lasers: Principal components of the threshold current density
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000431 (2004-01-05) Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000514 (2003-10) Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000D23 (1999-02) Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001037 (1997-05) The properties of low-threshold heterolasers with clusters of quantum dots
001044 (1997-04) Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
001060 (1997-01) Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
001095 (1997) Radiation characteristics of injection lasers based on vertically coupled quantum dots
001102 (1997) Negative characteristic temperature of InGaAs quantum dot injection laser
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
000084 (2011) Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000163 (2009) Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000172 (2009) Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000210 (2008) Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
000292 (2006) Self-organized formation of shell-like InAs/GaAs quantum dot ensembles
000318 (2006) Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000372 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005) High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000539 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000945 (2001) Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000996 (2001) Entropy-driven effects in self-organized formation of quantum dots
000A21 (2000-12-15) Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000C50 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
000C58 (1999-09) Gain characteristics of quantum-dot injection lasers
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
000E75 (1998-05) Structural characterization of self-organized nanostructures
000E95 (1998-03) Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination
001129 (1997) Collective superradiation effects in InGaAsP/InP liquid phase epitaxy-grown quasi-0-dimentional nanostructures
001211 (1996-02) A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
001320 (1995-04-15) Tuning and breakdown of faceting under externally applied stress
001811 (1991) Formation of strained superlattices with a macroscopic peroid via spinodal decomposition of III-V semiconductor alloys
Wicri

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