Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster A. S. Usikov - W. V. Lundin

Terms

15A. S. Usikov
14W. V. Lundin
37A. V. Sakharov
32I. L. Krestnikov
10A. Hoffmann
10D. Gerthsen
19I. P. Soshnikov
6O. M. Gorbenko

Associations

Freq.WeightAssociation
100.690A. S. Usikov - W. V. Lundin
130.571A. V. Sakharov - W. V. Lundin
190.552A. V. Sakharov - I. L. Krestnikov
60.507A. Hoffmann - W. V. Lundin
60.490A. S. Usikov - D. Gerthsen
60.490A. Hoffmann - A. S. Usikov
110.467A. S. Usikov - A. V. Sakharov
80.447A. Hoffmann - I. L. Krestnikov
60.435D. Gerthsen - I. P. Soshnikov
50.468I. P. Soshnikov - O. M. Gorbenko
60.335D. Gerthsen - I. L. Krestnikov
70.331I. L. Krestnikov - W. V. Lundin
70.320A. S. Usikov - I. L. Krestnikov
60.312A. Hoffmann - A. V. Sakharov
Documents par ordre de pertinence
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
000B48 (2000) Quantum dots formed by ultrathin insertions in wide-gap matrices
000C61 (1999-08-30) Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
000C83 (1999-06-28) Surface-mode lasing from stacked InGaN insertions in a GaN matrix
000348 (2005) QD lasers : Physics and applications
000505 (2003-11-03) Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000979 (2001) Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
000988 (2001) Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
000996 (2001) Entropy-driven effects in self-organized formation of quantum dots
000A09 (2001) Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
000A74 (2000-06) Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000074 (2011) MOVPE of device-oriented wide-band-gap III-N heterostructures
000209 (2008) Energy characteristics of excitons in InGaN/GaN heterostructures
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000809 (2002) Mosaicity and electrical and optical properties of group III nitrides
000893 (2001-07) The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering
000895 (2001-07) 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000985 (2001) InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000A16 (2001) 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001) 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
000A45 (2000-09-20) Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000C97 (1999-05) InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm
000D34 (1999-01-11) Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000F30 (1998) Optical studies of modulation doped InAs/GaAs quantum dots
001034 (1997-05-26) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
001061 (1997-01) Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001146 (1996-10) Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001211 (1996-02) A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000275 (2007) Analysis of the local indium composition in ultrathin InGaN layers
000295 (2006) Resonant Raman scattering in InGaN alloys
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000366 (2005) Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000374 (2005) High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000612 (2003) Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000636 (2003) MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000741 (2002-06) Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
000917 (2001-03) InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000947 (2001) Radiation-induced defects in n-type GaN and InN
000980 (2001) Large spectral splitting of TE and TM components of QDs in a microcavity
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C11 (2000) 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
000C12 (2000) 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C92 (1999-05-10) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000E73 (1998-05-15) High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F52 (1998) Formation of InAs quantum dots on a silicon (100) surface
000F90 (1997-10-15) Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001062 (1997-01) Modulation of a quantum well potential by a quantum-dot array
001116 (1997) Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
001419 (1994-09) Development and study of the optical properties of InGaAs/GaAs quantum wires
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024