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Serveur d'exploration sur l'Indium

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Le cluster A. N. Imenkov - N. M. Kolchanova

Terms

38A. N. Imenkov
26N. M. Kolchanova
22T. N. Danilova
14M. V. Stepanov
11A. P. Danilova
39V. V. Sherstnev
9O. G. Ershov
6P. Kubat

Associations

Freq.WeightAssociation
230.732A. N. Imenkov - N. M. Kolchanova
210.726A. N. Imenkov - T. N. Danilova
120.684M. V. Stepanov - T. N. Danilova
80.645A. P. Danilova - M. V. Stepanov
140.599M. V. Stepanov - V. V. Sherstnev
170.580T. N. Danilova - V. V. Sherstnev
90.579A. P. Danilova - T. N. Danilova
80.569O. G. Ershov - T. N. Danilova
110.531A. P. Danilova - V. V. Sherstnev
120.502N. M. Kolchanova - T. N. Danilova
190.494A. N. Imenkov - V. V. Sherstnev
100.489A. N. Imenkov - A. P. Danilova
60.480N. M. Kolchanova - P. Kubat
110.477A. N. Imenkov - M. V. Stepanov
80.473A. P. Danilova - N. M. Kolchanova
50.445M. V. Stepanov - O. G. Ershov
80.419M. V. Stepanov - N. M. Kolchanova
60.397A. N. Imenkov - P. Kubat
70.379A. N. Imenkov - O. G. Ershov
110.345N. M. Kolchanova - V. V. Sherstnev
60.320O. G. Ershov - V. V. Sherstnev
Documents par ordre de pertinence
000C41 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000D24 (1999-02) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000F00 (1998-02) InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K)
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
000F88 (1997-11) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
000E92 (1998-03) Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
001033 (1997-06) Influence of charge carriers on tuning in InAsSb lasers
001159 (1996-08) Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers
001171 (1996-07) Maximum working temperature of InAsSb/InAsSbP diode lasers
001292 (1995-09) Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP
000A43 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000791 (2002) Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000862 (2001-12) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000918 (2001-03) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000A33 (2000-12) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000A37 (2000-11) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
000D17 (1999-03) Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D29 (1999-02) High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
001172 (1996-07) Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001B55 (1988)
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000892 (2001-07) Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs
000C81 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000E28 (1998-11) Scanning electron microscopy of long-wavelength laser structures
001434 (1994-06) Recombination near an N-n-GaSb/GaInAsSb heterojunction
001437 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
001896 (1990) Original spontaneous electroluminescence generated in GaInAsSb heterojunction light-emitting diodes in the spectral range 1.8-2.4 μm
000105 (2010) Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000752 (2002-04-22) Optical switching in midinfrared light-emitting diodes
000A25 (2000-12-11) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
000A53 (2000-08-07) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm
000C84 (1999-06-15) Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
000D90 (1999) High power 4.6 μm light emitting diodes for CO detection
000E40 (1998-09) Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 μm
000E96 (1998-03) Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
001200 (1996-03) Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction
001275 (1995-12) Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region
001402 (1994-12) Thermal processes in GaInAsSb-based light-emitting-diode (LED) heterostructures
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001768 (1991) Optical reflection and determination of the characteristics of epitaxial InAs1-x-ySbxPy/InAs structures
001773 (1991) Melt-solid phase equilibria in the Pb-GaAs-GaSb system
001787 (1991) Investigation of the temperature dependence of the threshold current density of double-heterostructure GaInAsSb lasers
001792 (1991) Interface luminescence due to above-barrier reflection in an isotypic p-InAs/P-InAsPSb heterostructure
001825 (1991) Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
001880 (1990) Staggered-lineup heterojunctions in the system of GaSb-InAs
001884 (1990) Restrictions on the preparation of AIIIBV solid solutions
001A35 (1989)
001A37 (1989)
001E05 (1985)
Wicri

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