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Serveur d'exploration sur l'Indium

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Le cluster N. K. Polyakov - V. A. Egorov

Terms

28N. K. Polyakov
24V. A. Egorov
13A. A. Tonkikh
14Yu. B. Samsonenko
31G. E. Cirlin
22V. N. Petrov
14G. E. Tsyrlin
9V. G. Dubrovskii

Associations

Freq.WeightAssociation
200.772N. K. Polyakov - V. A. Egorov
120.679A. A. Tonkikh - V. A. Egorov
130.657N. K. Polyakov - Yu. B. Samsonenko
170.623G. E. Cirlin - V. A. Egorov
150.604N. K. Polyakov - V. N. Petrov
110.600V. A. Egorov - Yu. B. Samsonenko
80.593A. A. Tonkikh - Yu. B. Samsonenko
100.570G. E. Tsyrlin - V. N. Petrov
160.543G. E. Cirlin - N. K. Polyakov
60.535V. G. Dubrovskii - Yu. B. Samsonenko
100.524A. A. Tonkikh - N. K. Polyakov
100.505G. E. Tsyrlin - N. K. Polyakov
80.504N. K. Polyakov - V. G. Dubrovskii
100.480G. E. Cirlin - Yu. B. Samsonenko
90.448A. A. Tonkikh - G. E. Cirlin
70.419G. E. Cirlin - V. G. Dubrovskii
70.382G. E. Tsyrlin - V. A. Egorov
80.348V. A. Egorov - V. N. Petrov
90.345G. E. Cirlin - V. N. Petrov
50.340V. A. Egorov - V. G. Dubrovskii
Documents par ordre de pertinence
000411 (2004-04) The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000526 (2003-08) Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000536 (2003-07) Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000955 (2001) Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000A45 (2000-09-20) Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000244 (2007) Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000642 (2003) Investigation of the formation of InAs QD's in a AlGaAs matrix
000747 (2002-05) Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000763 (2002-03) Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A36 (2000-11) The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A62 (2000-07) Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000A89 (2000-05) Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm
000C56 (1999-09) Heteroepitaxial growth of InAs on Si: a new type of quantum dot
000F52 (1998) Formation of InAs quantum dots on a silicon (100) surface
001013 (1997-08) Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams
001232 (1996) STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
001379 (1995) Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy
000314 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000789 (2002) Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
000A91 (2000-05) A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000F98 (1997-10) A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system
001126 (1997) Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces
000595 (2003) The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaAs quantum dots
000640 (2003) Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
000795 (2002) Photoluminescence of isolated quantum dots in metastable InAs arrays
000A96 (2000-04) Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
000C85 (1999-06) Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
001011 (1997-08) Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
000075 (2011) Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents
000129 (2010) Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000349 (2005) Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000509 (2003-11) Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix
000539 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000603 (2003) Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots
000625 (2003) Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging
000945 (2001) Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000D55 (1999) Self-organized InAs quantum dots in a silicon matrix
000F07 (1998-01) Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
001267 (1996) An intemediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
001301 (1995-07-03) Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
001305 (1995-07) Luminescence properties of InAs quantum dots on vicinal GaAs(100) surface
Wicri

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