Documents par ordre de pertinence

000651 (2003)		InGaAsN/GaAs QD and QW structures grown by MOVPE
000876 (2001-10)		A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling
000922 (2001-02)		Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons
000A95 (2000-04)		Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates
000571 (2003-02)		Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy
000A24 (2000-12-15)		Low-field negative magnetoresistance in double-layer structures
000F09 (1998-01)		Characterization of GaAs/ InxGa1-xAs quantum-dot heterostructures by electrical and optical methods
000442 (2004)		Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000548 (2003-05-15)		Electron-electron interaction with decreasing conductance
000928 (2001)		X-ray optical scheme for diffraction study of semiconductor quantum wells and quantum dots

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