Serveur d'exploration sur l'Indium

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Le cluster E. E. Strumban - L. L. Kulyuk

Terms

6E. E. Strumban
9L. L. Kulyuk
23S. I. Radautsan
10A. N. Georgobiani
16I. M. Tiginyanu
5V. V. Ursaki

Associations

Freq.WeightAssociation
60.816E. E. Strumban - L. L. Kulyuk
60.417L. L. Kulyuk - S. I. Radautsan
80.632A. N. Georgobiani - I. M. Tiginyanu
50.559I. M. Tiginyanu - V. V. Ursaki
70.365I. M. Tiginyanu - S. I. Radautsan

Documents par ordre de pertinence
001E09 (1985)
001984 (1989) About the possibility of double centre formation in InP:Fe:O
001A62 (1988) On the possibility of formation of associated impurity centers in semi-insulating indium phosphide doped by oxygen
001A68 (1988) Influence of defect generation processes in CdIn2S4 single crystals on the photoluminescence and Raman scattering spectra
001C49 (1987)
001D00 (1986) Photoluminescence and laser emission in In0.53Ga0.47As/InP layers
001D05 (1986) Luminescence and photoconductivity caused by antisite defects in CdIn2S4 single crystals
001D58 (1986)
001E76 (1984)
001657 (1992) Luminescence of chromium ions in single crystals of semiconducting spinel CdIn2S4:Cr
001761 (1991) Photoelectrical properties of Zn3InGaS6 single crystals
001770 (1991) On the nature of radiation defects responsible for fermi level pinning effect in InP
001915 (1990) Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001956 (1989) Picosecond photoconductivity in InP:Fe:O
001966 (1989) Investigation of traps in InP:Zn single crystals implanted by phosphorus ions
001980 (1989) Change of the optical properties of CdS single crystals upon high dose indium and gallium implantation
001A60 (1988) Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta
001A71 (1988) Electrical properties of InPe:Fe single crystals implanted by phosphorus ions
001B29 (1988)
001E10 (1985)
001E35 (1984) Recombination radiation of proton-irradiated InP
001E42 (1984)
000119 (2010) Effect of Pressure on the Electrical Conductivity of p - TlInSe2 Single Crystals
000F11 (1998) Vapour phase and liquid phase doping of ZnSe by group III elements
001623 (1992) Self-diffusion coefficients of sulfur in In2S3, CdIn2S4, and Agln5S8 single crystals
001663 (1992) Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy
001917 (1990) InSb-ZnxCd1-xTe photosensitive thin-film MIS-structures
001937 (1990) Charge states of tin impurity atoms and their influence on the electical conductivity of In2S3
001993 (1989)
001A59 (1988) Photoconductivity, cathodoluminescence, and optical absorption of CdIn2S2Se2 single crystals
001A72 (1988) Direct optical transitions in CdGaInS4
001B17 (1988)
001B85 (1987) Photovoltaic effects and space charge limited currents in CdInGaS4 single crystals
001C35 (1987)
001D02 (1986) Photocapacitance effect in ZnxCd1-xTe-InSb structures
001D56 (1986)
001E34 (1984) Some properties of ZnTe-InP heterojunctions

Wicri

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