Documents par ordre de pertinence

000852 (2002)		Autosolitons in electron-hole plasma in InSb under hydrostatic pressure
000519 (2003-09)		Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb
000770 (2002-02)		Distribution of Charge Carriers in Dissipative Semiconductor Structures
000B01 (2000-04)		Fission of Longitudinal Autosolitons in InSb in a Magnetic Field
000E22 (1998-12)		Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625-628 (June 1988)]
000E68 (1998-06)		Autosolitons in InSb in a magnetic field
000F71 (1998)		Autosolitons in InSb in a magnetic field
000F72 (1998)		Autosolitons in InSb in a low magnetic field
000179 (2009)		About deep impurity centers in InAs
000658 (2003)		Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs
000D38 (1999-01)		Quasi-gapless semiconductor: p-type indium arsenide
001264 (1996)		Autosolitons in electron-hole plasma of InSb heated by electric pulses
001297 (1995-08)		Metal-insulator electronic phase transition in heavily doped compensated semiconductors
000617 (2003)		Preparation and properties of Metal/CuInSe2 diode structures
001216 (1996-01)		Autosolitons in the electron-hole plasma of indium antimonide heated and excited by an electric-field pulse
001448 (1994-03)		Autosolitons in indium antimonide
001E15 (1985)

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