Le cluster A. Yu. Leshko - N. V. Fetisova
| 000510 (2003-11) | 1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures | |
| 000559 (2003-04) | High-Power 1.7-1.8 μm Single-Mode Laser Diodes | |
| 000574 (2003-02) | Low-Threshold-Current 1.2-1.5 μm Laser Diodes Based on AlInGaAs/InP Heterostructures | |
| 000710 (2002-11) | High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures | |
| 000A99 (2000-04) | Mesastripe Single-Mode Separately Bounded Lasers Based on InGaAsP/InP Heterostructures Obtained by VPE of Organometallic Compounds | |
| 000B09 (2000-03) | Separately Bounded InGaAsP High-Power Laser Heterostructures Obtained by VPE of Organometallic Compounds | |
| 000699 (2003) | 14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers | |
| 000A60 (2000-07) | Properties of Wide-Mesastripe InGaAsP/InP Lasers | |
| 000500 (2003-12) | MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm | |
| 000866 (2001-11) | MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes | |
| 000A31 (2000-12) | On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers | |
| 000C67 (1999-08) | High-power broad-band single-mode InGaAsP/InP superluminescent diode | |
| 000261 (2007) | Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping | |
| 000419 (2004-03) | Internal Optical Loss in Semiconductor Lasers | |
| 000575 (2003-02) | Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes | |
| 000608 (2003) | SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100% | |
| 000740 (2002-06) | Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm | |
| 000887 (2001-08) | Threshold Characteristics of λ = 1.55 μm InGaAsP/InP Heterolasers | |
| 000B10 (2000-03) | Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures | |
| 000208 (2008) | Frequency tuning of diode laser radiation by surface acoustic wave | |
| 000244 (2007) | Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells | |
| 000662 (2003) | High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells | |
| 000688 (2003) | Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures | |
| 000692 (2003) | Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV | |
| 000721 (2002-09) | MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact | |
| 000764 (2002-03) | Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers | |
| 000C50 (1999-09) | Spontaneously assembling periodic composition-modulated InGaAsP structures | |
| 000C93 (1999-05) | Spontaneously forming periodic composition-modulated InGaAsP structures | |
| 000E66 (1998-06) | Self-organizing nanoheterostructures in InGaAsP solid solutions | |
| 001409 (1994-11) | Features of the spectral characteristics of high-power injection heterostructure lasers based on InGaAsP quaternary solid solutions | |
| 001676 (1992) | High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process | |
| 001805 (1991) | Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW | |
| 001816 (1991) | Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm) | |
| 000290 (2006) | Simulations of light -current and spectral characteristics of InGaAlAs/InP semiconductor lasers | |
| 000382 (2005) | Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range | |
| 000520 (2003-09) | Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates | |
| 000524 (2003-08) | Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures | |
| 000533 (2003-07-25) | Heterolaser Frequency Tuning under the Action of Ultrasonic Waves | |
| 000914 (2001-03) | Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers | |
| 000923 (2001-02) | Optical Study of InP Quantum Dots | |
| 000A35 (2000-11) | The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes | |
| 000A38 (2000-11) | Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap | |
| 000A85 (2000-05) | Power Conversion Efficiency of Quantum Dot Laser Diodes | |
| 000B29 (2000-01) | A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate | |
| 000B81 (2000) | Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes | |
| 000C12 (2000) | 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots | |
| 000C54 (1999-09) | InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm) | |
| 000C74 (1999-07) | Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host | |
| 000E15 (1999) | 3.9 W CW power from sub-monolayer quantum dot diode laser | |
| 000E23 (1998-12) | Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region | |
| 000E26 (1998-11-10) | Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands | |
| 000E45 (1998-09) | Optical orientation of donor-bound excitons in nanosized InP/InGaP islands | |
| 001201 (1996-03) | Optical strength of mirrors of high-power quantum-well laser diodes with separate confinement operating in the continuous-wave mode | |
| 001203 (1996-02-26) | Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes | |
| 001C51 (1987) | ||
| 001C80 (1987) | ||
| 001E69 (1984) | ||
| 001E70 (1984) |
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