Le cluster B. A. Matveev - G. N. Talalakin
| 000528 (2003-08) | Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes | |
| 000656 (2003) | InAs and InAsSb LEDs with built-in cavities | |
| 000730 (2002-08) | Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics | |
| 000735 (2002-07) | Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors | |
| 000860 (2001-12) | Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions | |
| 000902 (2001-05) | Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21) | |
| 000916 (2001-03) | Negative Luminescence in p-InAsSbP/n-InAs Diodes | |
| 000A66 (2000-07) | InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy | |
| 000A94 (2000-04) | Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm) | |
| 000B28 (2000-01) | Light Emitting Diodes for the Spectral Range of λ = 3.3-4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C | |
| 000C88 (1999-06) | Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers | |
| 000D26 (1999-02) | Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range | |
| 000638 (2003) | Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range | |
| 000782 (2002) | Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers? | |
| 000872 (2001-10) | High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm) | |
| 000915 (2001-03) | Optically Pumped Mid-Infrared InGaAs(Sb) LEDs | |
| 000C68 (1999-08) | Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5 | |
| 001163 (1996-08) | InAsSbP-InAs-InAsSbP laser double-heterostructures with a p-n junction in the active region | |
| 001553 (1993) | Long-wavelength low-threshold lasers based on III-V compounds | |
| 000432 (2004-01) | Strongly Compensated InAs Obtained by Proton Irradiation | |
| 000727 (2002-08-12) | 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm | |
| 001333 (1995-02) | Radiative recombination processes in double InAsSbP/InAsSb/InAsSbP heterostructures | |
| 001646 (1992) | Nature of the temperature dependence of the threshold current density of long-wavelength InAsSnP/InAs and InAsSbP/InAsSb double-heterostructure lasers | |
| 001B96 (1987) | ||
| 000099 (2010) | Properties of mid-IR diodes with n-InAsSbP/n-InAs interface | |
| 000145 (2009) | Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals | |
| 000235 (2007) | Performance of InAs-based infrared photodiodes | |
| 000245 (2007) | Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors | |
| 000354 (2005) | P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors | |
| 001106 (1997) | Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors | |
| 001551 (1993) | Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys | |
| 001E87 (1984) | ||
| 000115 (2010) | InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals | |
| 000858 (2001-12-17) | Current crowding in InAsSb light-emitting diodes | |
| 001155 (1996-09) | Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm | |
| 001357 (1995) | Radiation recombination in InAsSb/InAsSbP double heterostructures | |
| 001757 (1991) | Polarization of the luminescence emitted from the surface of III-V heterostructure with a profiled substrate | |
| 001878 (1990) | Structural quality of InAs1-x-ySbxPy-InAs double heterostructures | |
| 001885 (1990) | Residual deformation in epitaxial layers of InGaAsSb, InAsSbP, and InAsSb on an InAs substrate | |
| 001A46 (1989) | ||
| 001B07 (1988) | ||
| 001D47 (1986) | ||
| 000532 (2003-08) | Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy | |
| 000618 (2003) | Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE | |
| 000829 (2002) | High-power mid-infrared light emitting diodes grown by MOVPE | |
| 000879 (2001-09) | InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy | |
| 000A32 (2000-12) | Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy | |
| 000C39 (1999-10) | Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition | |
| 000F86 (1997-11) | Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers | |
| 001706 (1992) | Crossover from heterostructures of the first type to those of the second type in the InAs/InAsSpB system | |
| 001E30 (1984) | Tunneling surface recombination in MS structures on p-InAs | |
| 000404 (2004-05) | MOCVD Growth and Mg-Doping of InAs Layers | |
| 000F24 (1998) | Room temperature InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR | |
| 001162 (1996-08) | Noncooled InAsSbP/InAs photodiodes for the spectral range 3-5 μm | |
| 001607 (1992) | Sulfide passivation of InAs surface | |
| 001638 (1992) | Phase interaction and heteroepitaxy in the InPAsSb system |
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