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Serveur d'exploration sur l'Indium

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Le cluster T. I. Voronina - T. S. Lagunova

Terms

23T. I. Voronina
23T. S. Lagunova
12M. A. Sipovskaya
50K. D. Moiseev
53M. P. Mikhailova
84Yu. P. Yakovlev
10I. A. Andreev
8N. D. Stoyanov

Associations

Freq.WeightAssociation
210.913T. I. Voronina - T. S. Lagunova
90.542M. A. Sipovskaya - T. S. Lagunova
80.482M. A. Sipovskaya - T. I. Voronina
180.410T. I. Voronina - Yu. P. Yakovlev
410.796K. D. Moiseev - M. P. Mikhailova
390.602K. D. Moiseev - Yu. P. Yakovlev
390.585M. P. Mikhailova - Yu. P. Yakovlev
90.391I. A. Andreev - M. P. Mikhailova
160.364T. S. Lagunova - Yu. P. Yakovlev
120.354K. D. Moiseev - T. S. Lagunova
120.354K. D. Moiseev - T. I. Voronina
110.315M. P. Mikhailova - T. I. Voronina
60.300K. D. Moiseev - N. D. Stoyanov
60.291M. P. Mikhailova - N. D. Stoyanov
100.286M. P. Mikhailova - T. S. Lagunova
70.242I. A. Andreev - Yu. P. Yakovlev
60.231N. D. Stoyanov - Yu. P. Yakovlev
70.220M. A. Sipovskaya - Yu. P. Yakovlev
Documents par ordre de pertinence
001014 (1997-08) Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
001325 (1995-04) GaInAsSb/InAs heterojunctions
000183 (2008) Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000529 (2003-08) Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000908 (2001-04) Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
000913 (2001-03) Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties
000B21 (2000-02) Magnetotransport in a Semimetal Channel in p-Ga1 - xInxAsySb1 - y / p-InAs Heterostructures with Various Compositions of the Solid Solution
000C81 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000D21 (1999-03) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
000F01 (1998-02) Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
000F59 (1998) Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions
001559 (1993) Investigation of the structure of the conduction band of InAsSbP solid solutions
000731 (2002-08) Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000781 (2002) Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000E96 (1998-03) Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
001178 (1996-06) High carrier mobility in p-type GaInAsSb/p-InAs heterostructures
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001825 (1991) Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
000091 (2010) Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000105 (2010) Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000518 (2003-10) Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000525 (2003-08) Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000530 (2003-08) High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000532 (2003-08) Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26) A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000594 (2003) Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000633 (2003) Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000644 (2003) Interface luminescence and lasing at a type II single broken-gap heterojunction
000793 (2002) Raman scattering study of type II GaInAsSb/InAs heterostructures
000796 (2002) Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000877 (2001-09-15) Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
000888 (2001-08) The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy
000892 (2001-07) Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs
000910 (2001-03-19) Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000949 (2001) Quantum magnetotransport at a type II broken-gap single heterointerface
000A30 (2000-12) Photoluminescence of Ga1 - xInxAsySb1 - y Solid Solutions Lattice-Matched to InAs
000D17 (1999-03) Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D27 (1999-02) Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary
000E28 (1998-11) Scanning electron microscopy of long-wavelength laser structures
000F41 (1998) Interface-induced phenomena in type II antimonide-arsenide heterostructures
000F94 (1997-10) Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures
001030 (1997-06) Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
001031 (1997-06) Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation
001042 (1997-04) Solid solution InxGa1-xAsySbzP1-y-z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy
001324 (1995-04) Observation of an electroluminescence of confined carriers at single p-GaInAsSb/ p-InAs type-II broken-gap heterojunctions
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
000137 (2009) Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000150 (2009) InSb quantum dots and quantum rings on InAs-rich surface
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000818 (2002) Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction
000918 (2001-03) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000A28 (2000-12) Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface
000C39 (1999-10) Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition
000D29 (1999-02) High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
001162 (1996-08) Noncooled InAsSbP/InAs photodiodes for the spectral range 3-5 μm
001200 (1996-03) Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction
001247 (1996) Interface electroluminescence of confined carriers in type II broken-gap p-Ga-In-AsSb/p-InAs single heterojunction
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001850 (1991) Avalanche multiplication and ionization coefficients of GalnAsSb
001880 (1990) Staggered-lineup heterojunctions in the system of GaSb-InAs
001A81 (1988)
000011 (2013) TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000023 (2013) Electronic properties of a single heterojunction in InSb/InAs quantum dot system
000451 (2004) Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000618 (2003) Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000711 (2002-11) Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000862 (2001-12) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000879 (2001-09) InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000966 (2001) Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface
000A32 (2000-12) Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy
000A33 (2000-12) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000A37 (2000-11) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
000A43 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C41 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000D24 (1999-02) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000D92 (1999) Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy
000E40 (1998-09) Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 μm
000E92 (1998-03) Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
000F00 (1998-02) InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K)
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
000F88 (1997-11) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
001033 (1997-06) Influence of charge carriers on tuning in InAsSb lasers
001155 (1996-09) Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm
001292 (1995-09) Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP
001434 (1994-06) Recombination near an N-n-GaSb/GaInAsSb heterojunction
001437 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
001467 (1994) Type II heterojunctions in the GaInAsSb/GaSb system
Wicri

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