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Serveur d'exploration sur l'Indium

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Le cluster L. Eaves - P. C. Main

Terms

15L. Eaves
13P. C. Main
7A. Levin
8A. Patane
14M. Henini
8E. E. Vdovin
12G. Hill
5Yu. V. Dubrovskii

Associations

Freq.WeightAssociation
130.931L. Eaves - P. C. Main
60.802A. Levin - A. Patane
70.734A. Levin - P. C. Main
80.730A. Patane - L. Eaves
100.690L. Eaves - M. Henini
70.686A. Patane - P. C. Main
70.683A. Levin - L. Eaves
90.667M. Henini - P. C. Main
70.714E. E. Vdovin - G. Hill
70.661E. E. Vdovin - M. Henini
50.645G. Hill - Yu. V. Dubrovskii
70.639E. E. Vdovin - L. Eaves
50.598M. Henini - Yu. V. Dubrovskii
60.588E. E. Vdovin - P. C. Main
50.577L. Eaves - Yu. V. Dubrovskii
70.540G. Hill - M. Henini
70.522G. Hill - L. Eaves
60.480G. Hill - P. C. Main
Documents par ordre de pertinence
000753 (2002-04-15) Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy
000975 (2001) Magneto-tunnelling spectroscopy for spatial mapping of orbital wavefunctions of the ground and excited electronic states in self-assembled quantum dots
000605 (2003) Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling
000951 (2001) Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
000511 (2003-10-15) Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband
000632 (2003) Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T
000680 (2003) Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer
000674 (2003) Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000766 (2002-02-15) Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots
000A67 (2000-06-26) Stark shift in electroluminescence of individual InAs quantum dots
000D95 (1999) Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots
000E48 (1998-08-24) Electronic structure of self-assembled InAs quantum dots in GaAs matrix
000E50 (1998-08-15) Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover
000C73 (1999-07-15) Excited states and selection rules in self-assembled InAs/GaAs quantum dots
000197 (2008) Molecular Doping of Graphene
000648 (2003) Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
000752 (2002-04-22) Optical switching in midinfrared light-emitting diodes
000A23 (2000-12-15) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
000A25 (2000-12-11) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
000B25 (2000-01-24) Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
000C94 (1999-05) Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots
000D94 (1999) Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots
000E35 (1998-10) Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
000E63 (1998-06-10) Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots
001431 (1994-06-15) [001]- and piezoelectric-[111]-oriented InAs/GaSb structures under hydrostatic pressure
Wicri

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