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Serveur d'exploration sur l'Indium

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Le cluster A. Vasson - J. Leymarie

Terms

8A. Vasson
8J. Leymarie
5H. Amano
19T. V. Shubina
11V. N. Jmerik
12B. Monemar

Associations

Freq.WeightAssociation
81.000A. Vasson - J. Leymarie
50.791H. Amano - J. Leymarie
50.674H. Amano - V. N. Jmerik
100.692T. V. Shubina - V. N. Jmerik
80.649J. Leymarie - T. V. Shubina
80.649A. Vasson - T. V. Shubina
60.640J. Leymarie - V. N. Jmerik
60.640A. Vasson - V. N. Jmerik
60.612B. Monemar - J. Leymarie
60.612A. Vasson - B. Monemar
80.530B. Monemar - T. V. Shubina
60.522B. Monemar - V. N. Jmerik
50.513H. Amano - T. V. Shubina
Documents par ordre de pertinence
000357 (2005) Optical properties of InN with stoichoimetry violation and indium clustering
000358 (2005) Optical properties of InN related to surface plasmons
000415 (2004-03-19) Mie Resonances, Infrared Emission, and the Band Gap of InN
000464 (2004) Mie resonances, infrared emission, and the band gap of InN
000492 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000280 (2006) Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
000299 (2006) Plasmonic effects in InN-based structures with nano-clusters of metallic indium
000345 (2005) Resonant Raman spectroscopy on InN
000454 (2004) Plasma-assisted MBE growth and characterization of InN on sapphire
000230 (2007) Recent developments in the III-nitride materials
000233 (2007) Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000963 (2001) Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator
000D63 (1999) Plasma-assisted MBE growth of GaN and InGaN on different substrates
000100 (2010) Plasmonic effects and optical properties of InN composites with In nanoparticles
000252 (2007) From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000512 (2003-10-15) Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
000679 (2003) Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
000707 (2002-11-15) Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000823 (2002) InN growth by plasma-assisted molecular beam epitaxy
000832 (2002) Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
000D39 (1999-01) Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions
Wicri

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