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Serveur d'exploration sur l'Indium

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Le cluster D. B. Nikitin - P. V. Bulaev

Terms

6D. B. Nikitin
6P. V. Bulaev
18A. A. Marmalyuk
13A. A. Padalitsa

Associations

Freq.WeightAssociation
61.000D. B. Nikitin - P. V. Bulaev
130.850A. A. Marmalyuk - A. A. Padalitsa
60.679A. A. Padalitsa - P. V. Bulaev
60.679A. A. Padalitsa - D. B. Nikitin
60.577A. A. Marmalyuk - P. V. Bulaev
60.577A. A. Marmalyuk - D. B. Nikitin
Documents par ordre de pertinence
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000721 (2002-09) MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000817 (2002) Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000982 (2001) Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000382 (2005) Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000815 (2002) Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000136 (2009) Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures
000783 (2002) The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
000827 (2002) High-power single-transverse-mode ridge optical waveguide semiconductor lasers
000F56 (1998) Evaluation of elastic constants of AlN, GaN, and InN
Wicri

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