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Racine

Serveur d'exploration sur l'Indium

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Le cluster Finlande - Hongrie

Terms

17Finlande
11Hongrie
16République populaire de Chine
13Italie
8Israël
3Irlande (pays)
17Biélorussie
4Inde

Associations

Freq.WeightAssociation
33Finlande - Hongrie
11Hongrie - République populaire de Chine
11Italie - République populaire de Chine
11Finlande - République populaire de Chine
11Finlande - Italie
11Finlande - Israël
11Finlande - Irlande (pays)
11Biélorussie - République populaire de Chine
11Biélorussie - Inde
Documents par ordre de pertinence
000167 (2009) Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment
000031 (2012) Structure of ordered oxide on InAs(100) surface
000036 (2012) Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content
000049 (2012) Coherent quantum phase slip
000055 (2011) Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
000338 (2005) Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
000848 (2002) Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
000897 (2001-06-01) Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In
000D72 (1999) Nanosecond laser annealing of zinc-doped indium phosphide
000013 (2013) Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays
000039 (2012) Optical characterization of individual quantum dots
000048 (2012) Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000064 (2011) Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000088 (2011) 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber
000089 (2010) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000093 (2010) Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000112 (2010) Langmuir-Blodgett Films of Pyridyldithio-Modified Multiwalled Carbon Nanotubes as a Support to Immobilize Hydrogenase
000141 (2009) Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
000142 (2009) Photoconductivity of oxidized nanostructured PbTe(In) films
000170 (2009) Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000171 (2009) Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
000186 (2008) Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
000201 (2008) MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000204 (2008) Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000212 (2008) Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000218 (2008) Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
000224 (2007) The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000234 (2007) Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000257 (2007) Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films
000264 (2007) Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
000278 (2006) Tunable coherent infrared source from 5-16 μm based on difference-frequency mixing in an indium-doped GaSe crystal
000308 (2006) Modified GaSe crystal as a parametric frequency converter
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000327 (2006) Chemically prepared well-ordered InP(001) surfaces
000350 (2005) Polarized fine structure in the photoluminescence excitation spectrum of a negatively charged quantum dot
000351 (2005) Polarization spectroscopy of positive and negative trions in an InAs quantum dot
000375 (2005) Fast-operating focal plane array of a 128x128 elements format on the basis of insb with the frame-accurate accumulation and function of a range finder
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000416 (2004-03-15) Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
000437 (2004) Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
000459 (2004) Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
000486 (2004) Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures
000540 (2003-06-16) Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments
000541 (2003-06-15) Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
000587 (2003-01-01) Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000600 (2003) Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
000655 (2003) InAs quantum dots in multilayer GaAs-based heterostructures
000669 (2003) Film electrostatic light modulators using nanostructured inks
000671 (2003) Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000695 (2003) An increase of photorefractive sensitivity in In:LiNbO3 crystal
000725 (2002-08-15) Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
000728 (2002-08-01) Thermoelectric efficiency in graded indium-doped PbTe crystals
000729 (2002-08) Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
000806 (2002) Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities
000814 (2002) Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000850 (2002) Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1)
000853 (2002) Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000859 (2001-12-15) Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
000976 (2001) Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid
000992 (2001) Formation and investigation of photosensitive structures based on laser-deposited CuInSe2-2ZnSe films
000999 (2001) Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface
000A72 (2000-06-01) Double-step resistive superconducting transitions of indium and gallium in porous glass
000B40 (2000) Study of polish material removal by electrochemical method on different compound semiconductors
000C71 (1999-08) Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities
000D82 (1999) Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser
000D83 (1999) Interaction of low-density 2DEG with acoustic phonons
000F39 (1998) LM-HEMT and P-HEMT-technology for ultra high frequency devices
000F45 (1998) InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
000F46 (1998) Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
001106 (1997) Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors
001136 (1996-12-15) Two-dimensional excitonic emission in InAs submonolayers
001226 (1996) Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
001418 (1994-09) Dielectric study of the electroclinic effect in the smectic-A phase
001420 (1994-08-15) Brillouin scattering study of the pseudosurface acoustic mode on the (110) face of cubic crystals having elastic anisotropy ratio above unity
001450 (1994-02-15) Effect of deposition parameters on the properties of In2O3/InP junctions
Wicri

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