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Serveur d'exploration sur l'Indium

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Le cluster Ukraine - République tchèque

Terms

22Ukraine
17République tchèque
10Suisse
11Canada
19Pays-Bas
16Belgique
17Espagne
9Mexique

Associations

Freq.WeightAssociation
22République tchèque - Suisse
22Canada - Suisse
11Suisse - Ukraine
22Belgique - Pays-Bas
22Belgique - Espagne
22Espagne - Mexique
11Pays-Bas - République tchèque
Documents par ordre de pertinence
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000128 (2010) Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000173 (2009) Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000293 (2006) Room temperature ferromagnetism in III-V and II-IV-V2 dilute magnetic semiconductors
000324 (2006) Deep muonium state in InSb : Recombination center vs. trapping center
000596 (2003) The incommensurate structure of K3In(PO4)2
000607 (2003) Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells
000A97 (2000-04) Parity violation in neutron resonances in 115In
000E20 (1998-12-21) Beta-decay of 103In studied by using a total absorption spectrometer
000E21 (1998-12-21) Beta strength distribution in neutron-deficient nuclei
001283 (1995-10-15) Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements
001317 (1995-05-15) Dielectric spectroscopy of Ba(B1/2′B1/2========Prime;)O3 complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. II. Studies below the phonon eigenfrequencies (102-1012 Hz)
000015 (2013) Pd nanoparticles on SnO2(Sb) whiskers: Aggregation and reactivity in CO detection
000019 (2013) Microstructure of Interfaces in Heterosystems
000021 (2013) Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
000028 (2012) Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000043 (2012) Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
000046 (2012) Exchange bias behavior in Ni50.0Mn35.5 In14.5 ribbons annealed at different temperatures
000052 (2012) Annealing Influence on the Microstructure and Magnetic Properties of Ni-Mn-In Alloys Ribbons
000058 (2011) Structure of rapidly quenched Ga-free Heusler alloys
000090 (2010) Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
000093 (2010) Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
000103 (2010) On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys
000165 (2009) Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling
000178 (2009) Anelasticity of polycrystalline indium
000184 (2008) Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : InxGa1-xAs/GaAs
000185 (2008) The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000197 (2008) Molecular Doping of Graphene
000204 (2008) Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000235 (2007) Performance of InAs-based infrared photodiodes
000236 (2007) Orange to black electrochromic behaviour in poly (2 -(2 -thienyl ) -1h -pyrrole) thin films
000255 (2007) Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000314 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000338 (2005) Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
000354 (2005) P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000395 (2004-06-25) Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells
000409 (2004-04-15) Picosecond dynamics of bleaching and spin splitting in InP revealed by the photoinduced magneto-optical Kerr effect near the spin-orbit split-off exciton transition
000449 (2004) Semiconductor Bridgman growth inside inertial flight mode orbiting systems of low orbital eccentricity and long orbital period
000462 (2004) Muon dynamics at low temperatures in indium
000466 (2004) MCT heteroepitaxial 4 × 288 FPA
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000493 (2004) Antiferroelectric phase transition in Sr9In(PO4)7
000518 (2003-10) Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000562 (2003-03-01) Tumbling instability in a shearing nematic liquid crystal: Analysis of broadband dielectric results and theoretical treatment
000568 (2003-02-25) Many-Particle Interaction in Tunneling Spectroscopy of Impurity States on the InAs(110) Surface
000581 (2003-02) Anomalies in Static and Dynamic Conductivity of Indium Monoselenide
000589 (2003-01) Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000609 (2003) Resonant states of carbon acceptor in p-InGaAs/GaAs δ-doped quantum well heterostructure
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000660 (2003) Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
000698 (2003) 4x288 linear FPA on the Heteroepitaxial Hg1-xCdxTe Base
000706 (2002-11-15) Magneto-optical properties of charged excitons in quantum dots
000718 (2002-09) Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000790 (2002) Spin quantum beats in the Stokes shifted photoluminescence of InP quantum dots
000793 (2002) Raman scattering study of type II GaInAsSb/InAs heterostructures
000794 (2002) Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure
000796 (2002) Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000802 (2002) Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
000804 (2002) On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
000826 (2002) High-temperature phase transition in the whitlockite-type phosphate Ca9In(PO4)7
000854 (2002) AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
000858 (2001-12-17) Current crowding in InAsSb light-emitting diodes
000877 (2001-09-15) Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000912 (2001-03-10) Generation of Millimeter Radiation Due to Electric-Field-Induced Electron-Transit-Time Resonance in Indium Phosphide
000918 (2001-03) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000986 (2001) Impact of ion modification of HSS surfaces on the wear resistance of cutting tools with surface engineered coatings
000A33 (2000-12) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000B33 (2000) Threshold characteristics of InGaAsP/InP multiple quantum well lasers
000B68 (2000) LPE growth of GaSb and Sb-based solid solutions
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C91 (1999-05-15) Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
000C95 (1999-05) Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
000D01 (1999-04-01) Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths
000D50 (1999) Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
000D51 (1999) Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
000D88 (1999) High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers
000E04 (1999) Dielectric spectra and Vogel-Fulcher scaling in Pb(In0.5Nb0.5)O3 relaxor ferroelectric
000E19 (1998-12-21) Decay properties of ground-state and isomer of 103In
000E97 (1998-02-25) Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots
000E98 (1998-02) Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering
000F02 (1998-01-25) Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters
000F36 (1998) Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene
000F75 (1998) AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
000F78 (1998) "Intrinsic" transport properties of InSe studied by millimeter and submillimeter spectroscopy
001001 (1997-09-01) Regenerative pulsations in semiconductor etalon due to competition between carrier generation and heating effects on band filling
001027 (1997-07) A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
001109 (1997) LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
001110 (1997) Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers
001111 (1997) Injection-amplification IR-photodiodes
001113 (1997) InGaAsSb growth from Sb-rich solutions
Wicri

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