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Serveur d'exploration sur l'Indium

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Le cluster Canada - Suisse

Terms

11Canada
10Suisse
17République tchèque

Associations

Freq.WeightAssociation
20.191Canada - Suisse
20.153République tchèque - Suisse
Documents par ordre de pertinence
000293 (2006) Room temperature ferromagnetism in III-V and II-IV-V2 dilute magnetic semiconductors
000324 (2006) Deep muonium state in InSb : Recombination center vs. trapping center
000596 (2003) The incommensurate structure of K3In(PO4)2
001317 (1995-05-15) Dielectric spectroscopy of Ba(B1/2′B1/2========Prime;)O3 complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. II. Studies below the phonon eigenfrequencies (102-1012 Hz)
000021 (2013) Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000103 (2010) On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000314 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000462 (2004) Muon dynamics at low temperatures in indium
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000518 (2003-10) Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000790 (2002) Spin quantum beats in the Stokes shifted photoluminescence of InP quantum dots
000793 (2002) Raman scattering study of type II GaInAsSb/InAs heterostructures
000796 (2002) Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000877 (2001-09-15) Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
000905 (2001-04) The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000918 (2001-03) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000986 (2001) Impact of ion modification of HSS surfaces on the wear resistance of cutting tools with surface engineered coatings
000A33 (2000-12) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000B18 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000B33 (2000) Threshold characteristics of InGaAsP/InP multiple quantum well lasers
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000C21 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C91 (1999-05-15) Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
000D88 (1999) High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers
000F36 (1998) Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene
001110 (1997) Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers
001283 (1995-10-15) Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements
001326 (1995-03-13) Polarization resonances of optically spin-oriented photoelectrons emitted from strained semiconductor photocathodes
Wicri

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