| 000167 (2009) |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000031 (2012) |
| Structure of ordered oxide on InAs(100) surface |
| 000055 (2011) |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
| 000379 (2005) |
| Effects of separate carrier generation on the emission properties of InAs/ GaAs quantum dots |
| 000396 (2004-06-14) |
| The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots |
| 000416 (2004-03-15) |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 000460 (2004) |
| New peculiarities of interband tunneling in broken-gap heterostructures |
| 000478 (2004) |
| Electronic structures and transport properties of broken-gap heterostructures |
| 000479 (2004) |
| Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells |
| 000482 (2004) |
| Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
| 000494 (2004) |
| A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields |
| 000512 (2003-10-15) |
| Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot |
| 000725 (2002-08-15) |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 000821 (2002) |
| Influence of band state mixing on interband magnetotunnelling in broken-gap heterostructures |
| 000859 (2001-12-15) |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 000032 (2012) |
| Slowdown of atomic diffusion in liquid gallium-indium alloy under different nanoconfinements |
| 000036 (2012) |
| Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content |
| 000039 (2012) |
| Optical characterization of individual quantum dots |
| 000048 (2012) |
| Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
| 000049 (2012) |
| Coherent quantum phase slip |
| 000064 (2011) |
| Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching |
| 000076 (2011) |
| Interplay between adsorbed C60 fullerenes and point defects on a Si(111)3 x 3-In reconstructed surface |
| 000093 (2010) |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000112 (2010) |
| Langmuir-Blodgett Films of Pyridyldithio-Modified Multiwalled Carbon Nanotubes as a Support to Immobilize Hydrogenase |
| 000121 (2010) |
| Cooperative phenomena in self-assembled nucleation of 3 x 4-In/Si(100) surface magic clusters |
| 000127 (2010) |
| Atomic mobility in nanostructured liquid Ga-In alloy |
| 000169 (2009) |
| Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots |
| 000186 (2008) |
| Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells |
| 000187 (2008) |
| Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement |
| 000193 (2008) |
| Optical absorption of polarized light in InAs/GaSb quantum wells |
| 000201 (2008) |
| MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures |
| 000205 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000212 (2008) |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000224 (2007) |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency |
| 000230 (2007) |
| Recent developments in the III-nitride materials |
| 000252 (2007) |
| From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN |
| 000257 (2007) |
| Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films |
| 000264 (2007) |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition |
| 000272 (2007) |
| Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs |
| 000273 (2007) |
| Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation |
| 000276 (2006) |
| Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000338 (2005) |
| Synchrotron X-ray topographic study of dislocations and stacking faults in InAs |
| 000357 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000358 (2005) |
| Optical properties of InN related to surface plasmons |
| 000368 (2005) |
| Long wavelength VCSEL devices on GaAs substrates |
| 000387 (2005) |
| Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs |
| 000403 (2004-06) |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 000415 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000429 (2004-01-15) |
| Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties |
| 000438 (2004) |
| Weak antilocalization in quantum wells in tilted magnetic fields |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000459 (2004) |
| Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000471 (2004) |
| Influence of confined geometry on nuclear spin relaxation and self-diffusion in liquid indium |
| 000472 (2004) |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
| 000474 (2004) |
| High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy |
| 000486 (2004) |
| Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures |
| 000492 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000587 (2003-01-01) |
| Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy |
| 000600 (2003) |
| Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy |
| 000613 (2003) |
| Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys |
| 000655 (2003) |
| InAs quantum dots in multilayer GaAs-based heterostructures |
| 000662 (2003) |
| High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells |
| 000671 (2003) |
| Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses |
| 000679 (2003) |
| Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation |
| 000695 (2003) |
| An increase of photorefractive sensitivity in In:LiNbO3 crystal |
| 000700 (2002-12-15) |
| Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs |
| 000707 (2002-11-15) |
| Acceptor-induced threshold energy for the optical charging of InAs single quantum dots |
| 000712 (2002-11) |
| Correlation spectroscopy of excitons and biexcitons on a single quantum dot |
| 000729 (2002-08) |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 000808 (2002) |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
| 000814 (2002) |
| Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP |
| 000897 (2001-06-01) |
| Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In |
| 000967 (2001) |
| Novel compounds Sn10In14P22I8 and Sn14In10P21.2I8 with clathrate I structure: Synthesis and crystal and electronic structure |
| 000976 (2001) |
| Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid |
| 000988 (2001) |
| Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers |
| 000A09 (2001) |
| Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences |
| 000A69 (2000-06-15) |
| Optical transitions in broken gap heterostructures |
| 000A72 (2000-06-01) |
| Double-step resistive superconducting transitions of indium and gallium in porous glass |
| 000B39 (2000) |
| Studying element vaporization and atomization processes in electrothermal atomizers by laser-excited atomic fluorescence spectrometry : Indium, matrix effects |
| 000B40 (2000) |
| Study of polish material removal by electrochemical method on different compound semiconductors |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
| 000C03 (2000) |
| Cellular processing of 125I- and 111In-labeled epidermal growth factor (EGF) bound to cultured A431 tumor cells |
| 000C17 (1999-12-06) |
| Polaron Effects in Quantum Dots |
| 000C53 (1999-09) |
| Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning |
| 000D39 (1999-01) |
| Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions |
| 000D63 (1999) |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
| 000D72 (1999) |
| Nanosecond laser annealing of zinc-doped indium phosphide |
| 000D83 (1999) |
| Interaction of low-density 2DEG with acoustic phonons |
| 000F45 (1998) |
| InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range |
| 000F46 (1998) |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 001106 (1997) |
| Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors |
| 001120 (1997) |
| Electronic g factor in biased quantum wells |
| 001136 (1996-12-15) |
| Two-dimensional excitonic emission in InAs submonolayers |
| 001226 (1996) |
| Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures |
| 001231 (1996) |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001290 (1995-09-01) |
| Picosecond pulse shaping using dynamic carrier heating in a gain-switched semiconductor laser |
