| 000640 (2003) |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000049 (2012) |
| Coherent quantum phase slip |
| 000314 (2006) |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000345 (2005) |
| Resonant Raman spectroscopy on InN |
| 000358 (2005) |
| Optical properties of InN related to surface plasmons |
| 000452 (2004) |
| Renewed interest in powder diffraction data indexing |
| 000492 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000690 (2003) |
| Band gap of hexagonal InN and InGaN alloys |
| 000706 (2002-11-15) |
| Magneto-optical properties of charged excitons in quantum dots |
| 000739 (2002-06-15) |
| LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared |
| 000849 (2002) |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 (2002) |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000999 (2001) |
| Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface |
| 000C71 (1999-08) |
| Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities |
| 000F40 (1998) |
| Kinetics of dark excitons and excitonic trions in InGaAs single quantum well |
| 000024 (2013) |
| Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy |
| 000028 (2012) |
| Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure |
| 000072 (2011) |
| Monte Carlo simulations of the magnetocaloric effect in magnetic Ni-Mn-X (X = Ga, In) Heusler alloys |
| 000078 (2011) |
| Hot electron transport in heterostructures |
| 000092 (2010) |
| Thin film removal mechanisms in ns-laser processing of photovoltaic materials |
| 000093 (2010) |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000103 (2010) |
| On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys |
| 000109 (2010) |
| LiInSe2 nanosecond optical parametric oscillator tunable from 4.7 to 8.7 μm |
| 000171 (2009) |
| Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing |
| 000175 (2009) |
| Broadly tunable LiInSe2 optical parametric oscillator pumped by a Nd:YAG laser |
| 000197 (2008) |
| Molecular Doping of Graphene |
| 000211 (2008) |
| Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices |
| 000238 (2007) |
| Optical characterization of the LiInS2 and LiInSe2 crystals |
| 000239 (2007) |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® |
| 000243 (2007) |
| Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces |
| 000244 (2007) |
| Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells |
| 000248 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000268 (2007) |
| Characterization of the mid-infrared nonlinear crystals LiInSe2 and LiInS2 in the IR range |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000285 (2006) |
| Strong and weak coupling of single quantum dot excitons in pillar microcavities |
| 000309 (2006) |
| Mode locking of electron spin coherences in singly charged quantum dots |
| 000323 (2006) |
| Dephasing of excited-state excitons in InGaAs quantum dots |
| 000324 (2006) |
| Deep muonium state in InSb : Recombination center vs. trapping center |
| 000327 (2006) |
| Chemically prepared well-ordered InP(001) surfaces |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000336 (2005) |
| Terahertz generation by plasma waves in nanometer gate high electron mobility transistors |
| 000344 (2005) |
| SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers |
| 000348 (2005) |
| QD lasers : Physics and applications |
| 000352 (2005) |
| Phonon-induced exciton dephasing in quantum dot molecules |
| 000353 (2005) |
| Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs |
| 000357 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000369 (2005) |
| LiInSe2 nanosecond optical parametric oscillator |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000383 (2005) |
| Direct observation of the electron spin relaxation induced by nuclei in quantum dots |
| 000405 (2004-05) |
| Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures |
| 000414 (2004-03-29) |
| Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors |
| 000415 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000437 (2004) |
| Well-ordered (1 0 0) InAs surfaces using wet chemical treatments |
| 000441 (2004) |
| Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields |
| 000447 (2004) |
| Strong coupling in a single quantum dot-semiconductor microcavity system |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000505 (2003-11-03) |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 000540 (2003-06-16) |
| Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments |
| 000541 (2003-06-15) |
| Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001) |
| 000584 (2003-01-25) |
| Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP |
| 000619 (2003) |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000630 (2003) |
| Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals |
| 000632 (2003) |
| Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T |
| 000737 (2002-06-15) |
| Zero-field spin quantum beats in charged quantum dots |
| 000753 (2002-04-15) |
| Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy |
| 000816 (2002) |
| Long-wavelength quantum-dot lasers |
| 000848 (2002) |
| Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply |
| 000853 (2002) |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap |
| 000856 (2002) |
| 1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates |
| 000886 (2001-08-01) |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser |
| 000890 (2001-08) |
| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000897 (2001-06-01) |
| Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In |
| 000951 (2001) |
| Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling |
| 000962 (2001) |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000991 (2001) |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000993 (2001) |
| Fine structure of excitons in high quality thin quantum wells |
| 000A17 (2001) |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A26 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A46 (2000-09-20) |
| Molecular Static Model of CuInSe2 Crystal: Energy Properties of Some Structural Defects |
| 000A97 (2000-04) |
| Parity violation in neutron resonances in 115In |
| 000B00 (2000-04) |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B06 (2000-03-01) |
| Phase transitions of a simple hexagonal In0.2Sn0.8 alloy under high pressure |
| 000C05 (2000) |
| Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire |
| 000D13 (1999-03-10) |
| Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices |
| 000D58 (1999) |
| Pump-probe studies of photoluminescence of InP quantum wires embedded in dielectric matrix |
| 000D82 (1999) |
| Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser |
| 000D95 (1999) |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots |
| 000E19 (1998-12-21) |
| Decay properties of ground-state and isomer of 103In |
| 000E20 (1998-12-21) |
| Beta-decay of 103In studied by using a total absorption spectrometer |
| 000E21 (1998-12-21) |
| Beta strength distribution in neutron-deficient nuclei |
| 000E75 (1998-05) |
| Structural characterization of self-organized nanostructures |
| 000F13 (1998) |
| Two-dimensional electron gas at InAs(100)1 x 2/1 x 4 Pb |
| 001028 (1997-06-23) |
| Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure |
| 001043 (1997-04) |
| Interface phenomena and optical properties of structurally confined InP quantum wire ensembles. |
| 001092 (1997) |
| Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots |
| 001142 (1996-10-15) |
| Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions |
| 001204 (1996-02-15) |
| Weak antilocalization and spin precession in quantum wells |
| 001231 (1996) |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001248 (1996) |
| Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates |
