Wide band < Wide band gap semiconductors < Wide band noise

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List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000069 (2013)		Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000288 (2010)		Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials
000418 (2009)		Modeling of tunnel junctions for current injection in Vertical Cavity Surface Emitting Lasers (VCSELs)
000954 (2005)		High performances of InP channel power HEMT at 94 GHz
000A37 (2004-04-05)		Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C00 (2003-12-15)		Raman scattering in large single indium nitride dots: Correlation between morphology and strain
000C06 (2003-12-08)		Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers
000C13 (2003-10-15)		Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
000C37 (2003-05-19)		Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C43 (2003-04-15)		Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH
000C54 (2003-03-01)		In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000C61 (2003-02-01)		Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
000D27 (2003)		Nanostructure and properties of ZnO films produced by the pyrosol process
000D56 (2003)		ITO-on-top organic light-emitting devices: a correlated study of opto-electronic and structural characteristics
000E71 (2002-04-01)		Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
000F66 (2002)		Morphological study by XPS and AFM of wide band gap β-In2S3 thin films synthesized by a dry physical process
000F67 (2002)		Monte Carlo calculations of THz generation in wide gap semiconductors
001076 (2001-09-17)		Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
001078 (2001-09-15)		Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001079 (2001-09-10)		Incorporation kinetics of indium in indium gallium nitride at low temperature
001096 (2001-06-01)		Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

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