Ultraviolet photolysis < Ultraviolet radiation < Ultraviolet spectra

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List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000128 (2012)		Femtosecond envelope of the high-harmonic emission from ablation plasmas
000256 (2010)		Transparent pentacene-based photoconductor: high photoconductivity effect
000282 (2010)		Photoluminescence and energy transfer of Tm3+ doped LiIn (WO4)2 blue phosphors
000364 (2010)		A new BaB2Si2O8:Eu2+/Eu3+, Tb3+ phosphor - Synthesis and photoluminescence properties
001157 (2001)		Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum measurements by the four-probe method and by Kelvin force microscopy
001363 (2000)		Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001769 (1999)		Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy
001874 (1998-04)		Etude des propriétés électroniques et structurales des interfaces GaSe/Si(111) et InSe/Si(111) par la photoémission angulaire dans l'ultraviolet
001A42 (1998)		A Monte carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition
001B80 (1997)		X-ray and UV photoelectron spectroscopy of oxide desorption from InP under As4 and/or Sb4 overpressures : Exchange reaction As ========iff; Sb on InP surfaces
002053 (1995-05-15)		Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures
002221 (1994-12-01)		Soft laser sputtering of InP(100) surface
002303 (1994-04)		Contribution à l'étude de la croissance de GaSb et d'InAs par epitaxie par jets moléculaires
002341 (1994)		UV-O3 preparation of InAs (100) surfaces prior to MBE growth
002491 (1993-05)		Interaction, à température ambiante, de l'hydrogène atomique et de l'ammoniac avec la surface clivée propre du phosphure d'indium
002643 (1993)		Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films
002645 (1993)		Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002652 (1993)		In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy
002911 (1992)		Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
002962 (1991)		Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP : a valence-band contribution
002C03 (1990)		(2 + 1) resonant multiphoton ionization of sputtered P atoms : application to the detection of phosphorus in silicon samples

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