Transmission < Transmission electron microscopy < Transmission line

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 143.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000048 (2013)		Influence of precursor nature on the thermal growth of Tin-Indium oxide layers by MOCVD
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000097 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000113 (2012)		Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000117 (2012)		Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells : Indium Nitride and Related Alloys
000122 (2012)		In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide
000125 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000132 (2012)		E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
000146 (2011)		Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
000157 (2011)		The high sensitivity of InN under rare earth ion implantation at medium range energy
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000175 (2011)		Status of p-on-n Arsenic-Implanted HgCdTe Technologies
000194 (2011)		Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes
000200 (2011)		Luminescence of Polyethylene Glycol Coated CdSeTe/ZnS and InP/ZnS Nanoparticles in the Presence of Copper Cations
000205 (2011)		Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
000279 (2010)		Plasticity of indium antimonide between -176°C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000318 (2010)		Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000417 (2009)		Monolithic integration of InP-based transistors on Si substrates using MBE

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