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Serveur d'exploration sur l'Indium - Analysis (France)

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Transimpedance < Transistor < Transistor base  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000E12 (2003) 40 Gbit/s transmission: III-V integrated circuits for opto-electronic interfaces
000F97 (2002) InP and related alloys for electronic devices : Croissance épitaxiale en phase vapeur aux organométalliques
001621 (1999) Transistors et circuits intégrés à hétérostructures (III-V)
001B83 (1997) Uniform InAlAs/InP HFET fabricated using selective dry recess etching
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002A30 (1991) First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT
002B51 (1990) Improving the characteristics of InAlAs/InGaAs heterojunction bipolar transistors by employing thin base and collector layers
002B55 (1990) High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition
002B58 (1990) Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
003032 (1986) Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy

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