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Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000210 (2011) InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
000A22 (2005) 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000B38 (2004) InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001788 (1999) 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
002386 (1994) Low temperature low voltage operation of HEMTs on InP
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
002727 (1993) Characterization of GaAs and InGaAs double-quantum well heterostructure FET's
002A29 (1991) Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
002A92 (1990) Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer
002C43 (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

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