Threshold < Threshold current < Threshold current density

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000042 (2013)		Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000250 (2011)		1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000312 (2010)		High-index-contrast subwavelength grating VCSEL
000328 (2010)		Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
000358 (2010)		Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
000382 (2009)		Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000384 (2009)		The effect of hydrostatic pressure on the operation of quantum cascade lasers
000454 (2009)		Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
000456 (2009)		Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure
000475 (2009)		A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000505 (2008)		Singlemode 1.1 μm InGaAs Quantum Well microstructured Photonic Crystal VCSEL
000510 (2008)		Recent advances in long wavelength quantum dot based lasers
000561 (2008)		InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
000678 (2007)		Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000682 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000717 (2007)		Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
000736 (2007)		1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material
000740 (2006)		Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000820 (2006)		High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
000855 (2006)		Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

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