Temperature distribution < Temperature effect < Temperature effects

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000463 (2009)		Effect of bath temperature and annealing on the formation of CuInSe2
000616 (2007)		Thermodynamic and experimental study of chemical bath deposition of Zn(S, O, OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S, Se)2 absorbers
000809 (2006)		Interfacial structure in conjugated polymers : Characterization and control of the interface between poly(9,9-dioctylfluorene) and poly(9,9-dioctylfluorene-alt-benzothiadiazole)
000843 (2006)		Development of nanoparticle-polysiloxane composites for spacecraft applications
000905 (2005)		Phase diagram of high Tc Pb(In1/2Nb1/2)O3-PbTiO3 ceramics
000B58 (2004)		Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I-V measurements
000D47 (2003)		Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001146 (2001)		Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs
001185 (2001)		Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001208 (2001)		MBE growth of room-temperature InAsSb mid-infrared detectors
001688 (1999)		Optical and mechanical design of an InP based tunable detector for gas sensing applications
001795 (1998-12)		ETUDE DES EFFETS PARASITES DANS LES TRANSISTORS A EFFET DE CHAMP A HETEROJONCTION (HFET) SUR SUBSTRAT InP
001963 (1998)		Optical and electrical characterizations of poly(N-alkylcarbazole) light-emitting diodes. Interpretation of electrical behaviour
001968 (1998)		New γ-In2Se3/TCO (SnO2 or ZnO) thin film rectifying heterojunction
001976 (1998)		Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001C82 (1997)		Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
001F57 (1996)		Electrical and optical properties of phenylene vinylene oligomers obtained by vacuum evaporation
002114 (1995)		Surface chemistry of InAlAs after (NH4)2Sx sulphidation
002160 (1995)		LF excess noise analysis of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
002441 (1994)		Analysis of InP Schottky/tunnel metal-insulator-semiconductor diode characteristics with a conductance technique
002516 (1993)		Dépôt de nitrure de bore par PECVD pour son utilisation comme isolant de grille dans les structures MISFET sur InP

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