Surface treatments < Surfaces < Surfactant

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List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
000B37 (2004)		Indentation punching through thin (011) InP
000D12 (2003)		Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000D42 (2003)		Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D55 (2003)		In surface segregation in InGaN/GaN quantum wells
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000F15 (2002)		Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD
001261 (2001)		Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces
001365 (2000)		Papers presented at the 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semiconductors for Photovoltaics
001450 (2000)		Experimental observation of X-ray diffraction from a thin crystalline film at a 90° Bragg reflection
001506 (1999-12)		Instabilité de croissance dans les couches épitaxiées contraintes. Etude par microscopie à effet tunnel du système In1-xGaxAs / InP (001)
001647 (1999)		Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999)		Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001717 (1999)		Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBE
001813 (1998-11)		Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures
001850 (1998-07)		Etude de la croissance épitaxiale par jets moléculaires des lamellaires (GaSe, InSe) sur silicium et de ZnSe sur lamellaire
001925 (1998)		Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy
001A20 (1998)		CuInSe2 thin films grown by MOCVD : characterization, first devices
001A91 (1997-09)		Etude par microscopie tunnel de la transition 2D-3D lors de la croissance épitaxique de couches contraintes In1-xGaxAs sur InP (001)
001B72 (1997)		Effet de la température de fabrication sur les propriétés structurales et morphologiques des couches épaisses de In2S3 "spray"
001B79 (1997)		p- and n-type CuInSe2 thin films grown by close-spaced vapour transport
001B80 (1997)		X-ray and UV photoelectron spectroscopy of oxide desorption from InP under As4 and/or Sb4 overpressures : Exchange reaction As ========iff; Sb on InP surfaces

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