Supramolecular structure < Surface < Surface activity

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
002538 (1993)		Surface investigation by scanning tunneling microscopy in liquid medium
002645 (1993)		Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002658 (1993)		High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature
002680 (1993)		Epitaxy of layered semiconductor thin films
002722 (1993)		Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2×1) surfaces treated with (NH4)2Sx
002730 (1993)		Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
002773 (1992-03)		Oxydation thermique sous fluor d'InP(100). Application à la passivation des semiconducteurs III-V
002779 (1992)		Sur des propriétés des surfaces de quelques semiconducteurs III-V déduites de mesures de photovoltage
002815 (1992)		Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy
002817 (1992)		Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature
002878 (1992)		In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As
002898 (1992)		Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution
002923 (1992)		Continuum theory of the mixed-state and surface Joule effects in type-II superconductors
002968 (1991)		Theoretical determination of the root mean square thermal vibration amplitude of bulk and (110) surface atoms of InAs
002B49 (1990)		In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
002B88 (1990)		Catalytic nitridation of a III-V semiconductor using alkali metal
002C53 (1989)		Modifications of InP(110) surfaces induced by electron beam during Auger measurement
002E45 (1987)		Passivation de la surface des semiconducteurs III-V pour la réalisation de l'isolant de grille d'un transistor MISFET. Cas de la sulfuration de InP
002E60 (1987)		XPS Study of the chemical cleaning of epitaxial Ga0.47In0.53As (100) surfaces
002E72 (1987)		The influence of supercooling on the liquid phase epitaxial growth of InAs1-xSbx on (100) GaSb substrates
002F10 (1987)		Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

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