Stress measurement < Stress relaxation < Stress strain relation

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 71.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000155 (2011)		The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000339 (2010)		Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN
000651 (2007)		Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000692 (2007)		Effects of a shell on the electronic properties of nanowire superlattices
000745 (2006)		Undoped and rare-earth doped GaN quantum dots on AlGaN
000995 (2005)		Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation
000A76 (2004)		Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system
000B13 (2004)		Modelling of indium rich clusters in MOCVD InxGa1-xN/GaN multilayers
000B33 (2004)		Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells
000B49 (2004)		Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000C00 (2003-12-15)		Raman scattering in large single indium nitride dots: Correlation between morphology and strain
000C24 (2003-08-15)		Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
000D42 (2003)		Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000E09 (2003)		A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
000F01 (2002)		TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation
000F18 (2002)		Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
001059 (2001-12-01)		Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001133 (2001)		Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy

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